41A (Tc) Single FETs, MOSFETs

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of 77

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SIHB068N60EF-GE3 MOSFET N-CH 600V 41A D2PAK Vishay Siliconix	2,906 In Stock	1 : $6.29000 Tube	Tariff may apply if shipping to the United States	EF	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	68mOhm @ 16A, 10V	5V @ 250µA	77 nC @ 10 V	±30V	2628 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STB41N40DM6AG AUTOMOTIVE-GRADE N-CHANNEL 400 V STMicroelectronics	841 In Stock	1 : $7.26000 Cut Tape (CT) 1,000 : $3.01462 Tape & Reel (TR)	-	MDmesh™ DM6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	400 V	41A (Tc)	10V	65mOhm @ 20.5A, 10V	5V @ 250µA	53 nC @ 10 V	±25V	2310 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IMBG120R053M2HXTMA1 SICFET N-CH 1200V 41A TO263 Infineon Technologies	1,689 In Stock	1 : $8.31000 Cut Tape (CT) 1,000 : $3.60738 Tape & Reel (TR)	-	CoolSiC™ G2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V, 18V	52.6mOhm @ 13.2A, 18V	5.1V @ 4.1mA	30 nC @ 18 V	+23V, -10V	1010 pF @ 800 V	-	205W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R75MT12D SIC MOSFET N-CH 41A TO247-3 Navitas Semiconductor, Inc.	1,996 In Stock	1 : $14.53937 Tube	Tariff may apply if shipping to the United States	G3R™	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	+22V, -10V	1560 pF @ 800 V	-	207W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
DMTH6016LFVWQ-7 MOSFET N-CH 60V 41A POWERDI3333 Diodes Incorporated	1,065 In Stock	1 : $0.84000 Cut Tape (CT) 2,000 : $0.20414 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	41A (Tc)	4.5V, 10V	16mOhm @ 20A, 10V	2.5V @ 250µA	15.1 nC @ 10 V	±20V	939 pF @ 30 V	-	1.17W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
IRFP150PBF MOSFET N-CH 100V 41A TO247-3 Vishay Siliconix	411 In Stock	1 : $5.31000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	41A (Tc)	10V	55mOhm @ 25A, 10V	4V @ 250µA	140 nC @ 10 V	±20V	2800 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IPL60R065P7AUMA1 MOSFET N-CH 600V 41A 4VSON Infineon Technologies	9,335 In Stock	1 : $6.20000 Cut Tape (CT) 3,000 : $2.44113 Tape & Reel (TR)	-	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	65mOhm @ 15.9A, 10V	4V @ 800µA	67 nC @ 10 V	±20V	2895 pF @ 400 V	-	201W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-VSON-4	4-PowerTSFN
IMBG65R050M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	1,414 In Stock	1 : $7.51000 Cut Tape (CT) 1,000 : $3.15238 Tape & Reel (TR)	-	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	41A (Tc)	15V, 20V	62mOhm @ 18.2A, 18V	5.6V @ 3.7mA	22 nC @ 18 V	+23V, -7V	790 pF @ 400 V	-	172W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R75MT12K SIC MOSFET N-CH 41A TO247-4 Navitas Semiconductor, Inc.	1,220 In Stock	1 : $14.85000 Tube	-	G3R™	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	+22V, -10V	1560 pF @ 800 V	-	207W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
MSC080SMA330B4N MOSFET SIC 3300V 80 MOHM TO-247- Microchip Technology	30 In Stock	1 : $63.11000 Tube	Tariff may apply if shipping to the United States	MSiC™ MA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	41A (Tc)	20V	105mOhm @ 30A, 20V	2.97V @ 3mA	55 nC @ 20 V	+23V, -10V	3462 pF @ 2.4 kV	-	381W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
NVTFS5C471NLWFTAG MOSFET N-CHANNEL 40V 41A 8WDFN onsemi	1,571 In Stock	1 : $2.14000 Cut Tape (CT) 1,500 : $0.64900 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	41A (Tc)	4.5V, 10V	9mOhm @ 10A, 10V	2.2V @ 20µA	5.5 nC @ 4.5 V	±20V	660 pF @ 25 V	-	30W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SIHG068N60EF-GE3 MOSFET N-CH 600V 41A TO247AC Vishay Siliconix	354 In Stock	1 : $6.72000 Tube	Tariff may apply if shipping to the United States	EF	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	68mOhm @ 16A, 10V	5V @ 250µA	77 nC @ 10 V	±30V	2628 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
S2M0080120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	176 In Stock	1 : $7.31000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+25V, -10V	1324 pF @ 1000 V	-	231W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AD	TO-247-3
S2M0080120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	260 In Stock	1 : $7.90000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	54 nC @ 20 V	+25V, -10V	1324 pF @ 1000 V	-	231W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
NTMT061N60S5F SUPERFET5 FRFET, 61MOHM, PQFN88 onsemi	1,920 In Stock	1 : $9.50000 Cut Tape (CT) 3,000 : $4.29963 Tape & Reel (TR)	-	SuperFET® V, FRFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	61mOhm @ 20.5A, 10V	4.8V @ 4.6mA	76 nC @ 10 V	±30V	4175 pF @ 400 V	-	255W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-TDFN (8x8)	4-PowerTSFN
UF3C065040B3 MOSFET N-CH 650V 41A TO263 onsemi	388 In Stock 3,200 Factory	1 : $15.36000 Cut Tape (CT) 800 : $8.05000 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	650 V	41A (Tc)	12V	52mOhm @ 30A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	176W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BUK6Q21-30PJ BUK6Q21-30P/SOT8002/MLPAK33 Nexperia USA Inc.	3,000 In Stock	1 : $1.37000 Cut Tape (CT) 3,000 : $0.35433 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	41A (Tc)	4.5V, 10V	21.5mOhm @ 7.5A, 10V	2.7V @ 1mA	34 nC @ 10 V	±20V	1300 pF @ 15 V	-	56W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	MLPAK33	8-PowerVDFN
MCW075N60FH-BP N-CHANNEL MOSFET,TO-247 MCC (Micro Commercial Components)	340 In Stock	1 : $6.64000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	78mOhm @ 20A, 10V	5V @ 2.8mA	81 nC @ 10 V	±30V	3202 pF @ 100 V	-	312.5W (Tj)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IXSA40N120L2-7TR 1200V 80m (40A @ 25C) SiC MOSF IXYS	797 In Stock 800 Factory	1 : $8.26000 Cut Tape (CT) 800 : $3.57500 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V, 18V	104mOhm @ 10A, 18V	4.5V @ 5mA	53 nC @ 18 V	18V	1214 pF @ 800 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IXSH40N120L2KHV 1200V 80M (40A @ 25C) SIC MOSFET IXYS	450 In Stock	1 : $8.32000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V, 18V	104mOhm @ 10A, 18V	4.5V @ 5mA	53 nC @ 18 V	+20V, -5V	1214 pF @ 800 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
AAR075V120H1 1200V 75MR, TO247-4L, AUTOMOTIVE Luminus Devices Inc.	300 In Stock	1 : $8.46000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	92mOhm @ 18A, 15V	4V @ 5mA	58 nC @ 15 V	+22V, -10V	1487 pF @ 1000 V	-	231W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L	TO-247-4
BUK9535-100A,127 MOSFET N-CH 100V 41A TO220AB Nexperia USA Inc.	3,380 Marketplace	233 : $1.29000 Tube	-	TrenchMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	41A (Tc)	4.5V, 10V	34mOhm @ 25A, 10V	2V @ 1mA	-	±10V	3573 pF @ 25 V	-	149W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220AB	TO-220-3
IRFP150 MOSFET N-CH 100V 41A TO247-3 Harris Corporation	12,313 Marketplace	174 : $1.73000 Tube	-	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	41A (Tc)	10V	55mOhm @ 25A, 10V	4V @ 250µA	140 nC @ 10 V	±20V	2800 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
DMTH6016LFVWQ-13 MOSFET N-CH 60V 41A POWERDI3333 Diodes Incorporated	535 In Stock	1 : $0.84000 Cut Tape (CT) 3,000 : $0.19353 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	41A (Tc)	4.5V, 10V	16mOhm @ 20A, 10V	2.5V @ 250µA	15.1 nC @ 10 V	±20V	939 pF @ 30 V	-	1.17W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
NVTFS5C471NLTAG MOSFET N-CHANNEL 40V 41A 8WDFN onsemi	60 In Stock	1 : $1.49000 Cut Tape (CT) 1,500 : $0.42599 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	41A (Tc)	4.5V, 10V	9mOhm @ 10A, 10V	2.2V @ 20µA	12 nC @ 10 V	±20V	660 pF @ 25 V	-	30W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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