4-PowerLSFN Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IMTA65R033M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	1,990 In Stock	1 : $9.25000 Cut Tape (CT) 2,000 : $4.15275 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	68A (Tc)	15V, 20V	30mOhm @ 27.9A, 20V	5.6V @ 5.7mA	34 nC @ 18 V	+23V, -7V	1214 pF @ 400 V	-	315W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-LHSOF-4-1	4-PowerLSFN
IPTA60R180CM8XTMA1 IPTA60R180CM8XTMA1 Infineon Technologies	1,750 In Stock	1 : $2.60000 Cut Tape (CT) 2,000 : $0.76721 Tape & Reel (TR)	-	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tj)	10V	180mOhm @ 5.6A, 10V	4.7V @ 140µA	17 nC @ 10 V	±20V	743 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-LHSOF-4-1	4-PowerLSFN
IMTA65R075M2HXTMA1 IMTA65R075M2HXTMA1 Infineon Technologies	470 In Stock	1 : $5.28000 Tube	-	CoolSiC™ G2	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A (Tc)	15V, 20V	68mOhm @ 11.9A, 20V	5.6V @ 2.4mA	14.9 nC @ 18 V	+23V, -7V	516 pF @ 400 V	-	141W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-LHSOF-4-1	4-PowerLSFN
IMT65R075M2HXUMA1 SICFET N-CH 650V 30A LHSOF-4 Infineon Technologies	1,000 In Stock	1 : $5.61000 Tube	-	CoolSiC™ G2	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A (Tc)	15V, 20V	95mOhm @ 11.9A, 18V	5.6V @ 2.4mA	14.9 nC @ 18 V	+25V, -10V	516 pF @ 400 V	-	141W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-LHSOF-4-1	4-PowerLSFN
IMTA65R026M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	111 In Stock	1 : $10.85000 Cut Tape (CT) 2,000 : $5.12213 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	79A (Tc)	15V, 20V	24mOhm @ 34.5A, 20V	5.6V @ 7mA	42 nC @ 18 V	+23V, -7V	1499 pF @ 400 V	-	357W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-LHSOF-4-1	4-PowerLSFN

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.