4.8A (Ta) Single FETs, MOSFETs

Showing

of 29

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
DMN2055U-13 MOSFET N-CH 20V 4.8A SOT23 T&R 1 Diodes Incorporated	1,888 In Stock	1 : $0.40000 Cut Tape (CT) 10,000 : $0.07136 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.8A (Ta)	2.5V, 4.5V	38mOhm @ 3.6A, 4.5V	1V @ 250µA	4.3 nC @ 4.5 V	±8V	400 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMN4060SVT-7 MOSFET N-CH 45V 4.8A TSOT26 Diodes Incorporated	6,377 In Stock	1 : $0.57000 Cut Tape (CT) 3,000 : $0.12385 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	45 V	4.8A (Ta)	4.5V, 10V	46mOhm @ 4.3A, 10V	3V @ 250µA	22.4 nC @ 10 V	±20V	1287 pF @ 25 V	-	1.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
DMP6050SFG-13 MOSFET P-CH 60V 4.8A PWRDI3333-8 Diodes Incorporated	16,422 In Stock	1 : $1.03000 Cut Tape (CT) 3,000 : $0.24745 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	4.8A (Ta)	4.5V, 10V	50mOhm @ 5A, 10V	3V @ 250µA	24 nC @ 10 V	±20V	1293 pF @ 30 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN
DMP6050SFG-7 MOSFET P-CH 60V 4.8A PWRDI3333-8 Diodes Incorporated	1,113 In Stock	1 : $1.03000 Cut Tape (CT) 2,000 : $0.26037 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	4.8A (Ta)	4.5V, 10V	50mOhm @ 5A, 10V	3V @ 250µA	24 nC @ 10 V	±20V	1293 pF @ 30 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN
NVLJS053N12MCLTAG PTNG 120V LL NCH IN UDFN 2.0X2.0 onsemi	1,503 In Stock 12,000 Factory	1 : $1.19000 Cut Tape (CT) 3,000 : $0.30019 Tape & Reel (TR)	-	SuperFET® III, FRFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	120 V	4.8A (Ta)	4.5V, 10V	53mOhm @ 5.2A, 10V	3V @ 30µA	7.8 nC @ 10 V	±20V	520 pF @ 60 V	-	620mW (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-UDFN (2x2)	6-UDFN Exposed Pad
ZXMN6A25GTA MOSFET N-CH 60V 4.8A SOT223 Diodes Incorporated	9,986 In Stock 50,000 Factory	1 : $1.62000 Cut Tape (CT) 1,000 : $0.47877 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	4.8A (Ta)	4.5V, 10V	50mOhm @ 3.6A, 10V	1V @ 250µA (Min)	20.4 nC @ 10 V	±20V	1063 pF @ 30 V	-	2W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
SSM6J216FE,LF MOSFET P-CHANNEL 12V 4.8A ES6 Toshiba Semiconductor and Storage	3,919 In Stock	1 : $0.64000 Cut Tape (CT) 4,000 : $0.13563 Tape & Reel (TR)	-	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	4.8A (Ta)	1.5V, 4.5V	32mOhm @ 3.5A, 4.5V	1V @ 1mA	12.7 nC @ 4.5 V	±8V	1040 pF @ 12 V	-	700mW (Ta)	150°C	-	-	Surface Mount	ES6	SOT-563, SOT-666
DMP3050LSS-13 MOSFET P-CH 30V 4.8A 8SO Diodes Incorporated	1,653 In Stock 32,500 Factory	1 : $0.80000 Cut Tape (CT) 2,500 : $0.18926 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4.8A (Ta)	4.5V, 10V	45mOhm @ 6A, 10V	2V @ 250µA	10.5 nC @ 10 V	±25V	620 pF @ 15 V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMN2055U-7 MOSFET N-CH 20V 4.8A SOT23 T&R 3 Diodes Incorporated	2,410 In Stock	1 : $0.40000 Cut Tape (CT) 3,000 : $0.08449 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.8A (Ta)	2.5V, 4.5V	38mOhm @ 3.6A, 4.5V	1V @ 250µA	4.3 nC @ 4.5 V	±8V	400 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
NTMS7N03R2 MOSFET N-CH 30V 4.8A 8SOIC onsemi	0 In Stock 58,468 Marketplace	956 : $0.31000 Bulk	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	4.8A (Ta)	4.5V, 10V	23mOhm @ 7A, 10V	3V @ 250µA	43 nC @ 10 V	±20V	1190 pF @ 25 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
NTMS7N03R2G MOSFET N-CH 30V 4.8A 8SOIC onsemi	0 In Stock 7,205 Marketplace	295 : $1.02000 Bulk	-	-	Tape & Reel (TR) Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	4.8A (Ta)	4.5V, 10V	23mOhm @ 7A, 10V	3V @ 250µA	43 nC @ 10 V	±20V	1190 pF @ 25 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PMN30UNEX MOSFET N-CH 20V 4.8A 6TSOP Nexperia USA Inc.	799 In Stock	1 : $0.49000 Cut Tape (CT) 3,000 : $0.10032 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.8A (Ta)	1.5V, 4.5V	36mOhm @ 4.8A, 4.5V	900mV @ 250µA	9 nC @ 4.5 V	±8V	558 pF @ 10 V	-	530mW (Ta), 4.46W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SC-74, SOT-457
PMV30ENEAR MOSFET N-CH 40V 4.8A TO236AB Nexperia USA Inc.	0 In Stock	1 : $0.70000 Cut Tape (CT) 3,000 : $0.15834 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	4.8A (Ta)	4.5V, 10V	30mOhm @ 4.8A, 10V	2.5V @ 250µA	11.7 nC @ 10 V	±20V	440 pF @ 20 V	-	710mW (Ta), 8.3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
DMN2055UQ-13 MOSFET BVDSS: 8V~24V SOT23 T&R 1 Diodes Incorporated	0 In Stock Check Lead Time	10,000 : $0.06466 Bulk	Tariff may apply if shipping to the United States	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.8A (Ta)	2.5V, 4.5V	38mOhm @ 3.6A, 4.5V	1V @ 250µA	4.3 nC @ 4.5 V	±8V	400 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMN2055UQ-7 MOSFET BVDSS: 8V~24V SOT23 T&R 3 Diodes Incorporated	0 In Stock Check Lead Time	3,000 : $0.07678 Bulk	Tariff may apply if shipping to the United States	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.8A (Ta)	2.5V, 4.5V	38mOhm @ 3.6A, 4.5V	1V @ 250µA	4.3 nC @ 4.5 V	±8V	400 pF @ 10 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMP2068UFY4Q-7 IC Diodes Incorporated	0 In Stock 33,000 Factory Check Lead Time	3,000 : $0.10540 Tape & Reel (TR)	-	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	16 V	4.8A (Ta)	1.8V, 4.5V	39mOhm @ 4A, 4.5V	1V @ 250µA	11 nC @ 4.5 V	±8V	973 pF @ 10 V	-	650mW	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	X2-DFN2015-3	3-XDFN
DMP2068UFY4-7 IC Diodes Incorporated	0 In Stock Check Lead Time	3,000 : $0.10540 Tape & Reel (TR)	-	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	16 V	4.8A (Ta)	1.8V, 4.5V	39mOhm @ 4A, 4.5V	1V @ 250µA	11 nC @ 4.5 V	±8V	973 pF @ 10 V	-	650mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	X2-DFN2015-3	3-XDFN
PJL9430A_R2_00001 60V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	0 In Stock Check Lead Time	2,500 : $0.16119 Tape & Reel (TR)	-	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	4.8A (Ta)	4.5V, 10V	50mOhm @ 4.8A, 10V	2.5V @ 250µA	14 nC @ 10 V	±20V	815 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
ZXMN6A25G MOSFET N-CH 60V 4.8A SOT223 Diodes Incorporated	0 In Stock	1,000 : $0.43321 Tape & Reel (TR)	-	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	4.8A (Ta)	4.5V, 10V	50mOhm @ 3.6A, 10V	1V @ 250µA (Min)	20.4 nC @ 10 V	±20V	1063 pF @ 30 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
SI8413DB-T1-E1 MOSFET P-CH 20V 4.8A 4MICROFOOT Vishay Siliconix	0 In Stock	3,000 : $0.53221 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	4.8A (Ta)	2.5V, 4.5V	48mOhm @ 1A, 4.5V	1.4V @ 250µA	21 nC @ 4.5 V	±12V	-	-	1.47W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
SI4484EY-T1-GE3 MOSFET N-CH 100V 4.8A 8SO Vishay Siliconix	0 In Stock	2,500 : $0.57840 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	4.8A (Ta)	6V, 10V	34mOhm @ 6.9A, 10V	2V @ 250µA (Min)	30 nC @ 10 V	±20V	-	-	1.8W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PMCM950ENEZ MOSFET N-CH 60V 4.8A 9WLCSP Nexperia USA Inc.	0 In Stock	1 : $0.58000 Cut Tape (CT)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	4.8A (Ta)	4.5V, 10V	41mOhm @ 3A, 10V	1.5V @ 250µA	45 nC @ 10 V	±20V	1160 pF @ 30 V	-	780mW (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	9-WLCSP (1.48x1.48)	9-XFBGA, WLCSP
SI4484EY-T1-E3 MOSFET N-CH 100V 4.8A 8SO Vishay Siliconix	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	4.8A (Ta)	6V, 10V	34mOhm @ 6.9A, 10V	2V @ 250µA (Min)	30 nC @ 10 V	±20V	-	-	1.8W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI5433BDC-T1-E3 MOSFET P-CH 20V 4.8A 1206-8 Vishay Siliconix	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	4.8A (Ta)	1.8V, 4.5V	37mOhm @ 4.8A, 4.5V	1V @ 250µA	22 nC @ 4.5 V	±8V	-	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	1206-8 ChipFET™	8-SMD, Flat Leads
TPCP8103-H(TE85LFM MOSFET P-CH 40V 4.8A PS-8 Toshiba Semiconductor and Storage	0 In Stock	Obsolete	-	U-MOSIII-H	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	4.8A (Ta)	4.5V, 10V	40mOhm @ 2.4A, 10V	2V @ 1mA	19 nC @ 10 V	±20V	800 pF @ 10 V	-	840mW (Ta)	150°C (TJ)	-	-	Surface Mount	PS-8 (2.9x2.4)	8-SMD, Flat Leads

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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