350mA (Ta) Single FETs, MOSFETs

Results: 50
Manufacturer
Diodes IncorporatedHarris CorporationInfineon TechnologiesMicro Commercial CoNexperia USA Inc.NXP SemiconductorsNXP USA Inc.onsemiPanjit International Inc.Vishay Siliconix
Series
-PowerTrench®SIPMOS®SIPMOS™TrenchFET®TrenchMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V50 V60 V240 V250 V300 V400 V
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V1.5V, 4.5V1.8V, 4.5V1.8V, 5V2.5V, 10V2.5V, 4.5V2.8V, 10V2.8V, 4.5V4.5V, 10V5V, 10V10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 350mA, 4.5V1.4Ohm @ 350mA, 4.5V1.5Ohm @ 100mA, 4.5V1.6Ohm @ 500mA, 10V2Ohm @ 50mA, 5V2.5Ohm @ 300mA, 10V2.8Ohm @ 200mA, 10V2.8Ohm @ 200mA, 4.5V2.8Ohm @ 250mA, 10V3.6Ohm @ 210mA, 10V6Ohm @ 250mA, 10V6Ohm @ 350mA, 10V6.5Ohm @ 170mA, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)900mV @ 250µA1V @ 108µA1V @ 250µA1.1V @ 250µA1.2V @ 250µA1.3V @ 1mA1.3V @ 250µA1.4V @ 108µA1.4V @ 250µA1.5V @ 250µA1.8V @ 108µA2V @ 1mA2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 4.5 V0.4 nC @ 4.5 V0.6 nC @ 4.5 V0.68 nC @ 4.5 V0.7 nC @ 4.5 V0.87 nC @ 4.5 V0.9 nC @ 10 V1 nC @ 10 V1 nC @ 4.5 V1.4 nC @ 10 V1.4 nC @ 4.5 V1.5 nC @ 10 V1.5 nC @ 4.5 V1.7 nC @ 10 V
Vgs (Max)
±6V±8V±10V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
13.6 pF @ 15 V22.2 pF @ 30 V23.2 pF @ 25 V23.6 pF @ 10 V28.5 pF @ 30 V29 pF @ 25 V30 pF @ 25 V34 pF @ 15 V35 pF @ 25 V40 pF @ 25 V46 pF @ 25 V50 pF @ 10 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
150mW (Ta)223mW (Ta)250mW (Ta)250mW (Ta), 770mW (Tc)260mW (Ta)260mW (Ta), 830mW (Tc)300mW (Ta)320mW350mW (Ta)350mW (Ta), 2.8W (Tc)350mW (Ta), 3.1W (Tc)370mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
3-CPH4-DIP, Hexdip, HVMDIP4-HVMDIPDFN0606-3DFN1006B-3PG-SOT223-4PG-SOT223-4-21SC-75SC-75ASC-89-3SOT-223SOT-23SOT-23-3SOT-323
Package / Case
3-XFDFN4-DIP (0.300", 7.62mm)SC-101, SOT-883SC-70, SOT-323SC-75, SOT-416SC-89, SOT-490SOT-523TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SC-101 SOT-883
NX7002BKMYL
MOSFET N-CH 60V 350MA DFN1006-3
Nexperia USA Inc.
61,038
In Stock
1 : $0.26000
Cut Tape (CT)
10,000 : $0.03400
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V350mA (Ta)5V, 10V2.8Ohm @ 200mA, 10V2.1V @ 250µA1 nC @ 10 V±20V23.6 pF @ 10 V-350mW (Ta), 3.1W (Tc)-55°C ~ 150°C (TJ)--Surface MountSOT-883SC-101, SOT-883
TO-236AB
2N7002BK,215
MOSFET N-CH 60V 350MA TO236AB
Nexperia USA Inc.
841,962
In Stock
1 : $0.27000
Cut Tape (CT)
3,000 : $0.04529
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V350mA (Ta)10V1.6Ohm @ 500mA, 10V2.1V @ 250µA0.6 nC @ 4.5 V±20V50 pF @ 10 V-370mW (Ta)150°C (TJ)AutomotiveAEC-Q101Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
Pkg 5868
SI1013R-T1-GE3
MOSFET P-CH 20V 350MA SC75A
Vishay Siliconix
86,435
In Stock
1 : $0.43000
Cut Tape (CT)
3,000 : $0.14451
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V350mA (Ta)1.8V, 4.5V1.2Ohm @ 350mA, 4.5V450mV @ 250µA (Min)1.5 nC @ 4.5 V±6V--150mW (Ta)-55°C ~ 150°C (TJ)--Surface MountSC-75ASC-75, SOT-416
SOT-223-4
BSP129H6327XTSA1
MOSFET N-CH 240V 350MA SOT223-4
Infineon Technologies
8,796
In Stock
1 : $0.85000
Cut Tape (CT)
1,000 : $0.36425
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)240 V350mA (Ta)0V, 10V6Ohm @ 350mA, 10V1V @ 108µA5.7 nC @ 5 V±20V108 pF @ 25 VDepletion Mode1.8W (Ta)-55°C ~ 150°C (TJ)--Surface MountPG-SOT223-4TO-261-4, TO-261AA
SOT-23-3
DMN63D8L-7
MOSFET N-CH 30V 350MA SOT23
Diodes Incorporated
534,004
In Stock
1 : $0.24000
Cut Tape (CT)
3,000 : $0.03995
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V350mA (Ta)2.5V, 10V2.8Ohm @ 250mA, 10V1.5V @ 250µA0.9 nC @ 10 V±20V23.2 pF @ 25 V-350mW (Ta)-55°C ~ 150°C (TJ)--Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
SOT-323
NX3008NBKW,115
MOSFET N-CH 30V 350MA SOT323
Nexperia USA Inc.
652,312
In Stock
1 : $0.25000
Cut Tape (CT)
3,000 : $0.04127
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V350mA (Ta)1.8V, 4.5V1.4Ohm @ 350mA, 4.5V1.1V @ 250µA0.68 nC @ 4.5 V±8V50 pF @ 15 V-260mW (Ta), 830mW (Tc)-55°C ~ 150°C (TJ)AutomotiveAEC-Q101Surface MountSOT-323SC-70, SOT-323
DFN0606-3
NX7002BKHH
MOSFET N-CH 60V 350MA DFN0606-3
Nexperia USA Inc.
32,887
In Stock
1 : $0.27000
Cut Tape (CT)
10,000 : $0.03434
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V350mA (Ta)4.5V, 10V2.8Ohm @ 200mA, 10V2.1V @ 250µA1 nC @ 10 V±20V22.2 pF @ 30 V-380mW (Ta), 2.8W (Tc)-55°C ~ 150°C (TJ)--Surface MountDFN0606-33-XFDFN
TO-236AB
2N7002BKVL
MOSFET N-CH 60V 350MA TO236AB
Nexperia USA Inc.
27,998
In Stock
1 : $0.27000
Cut Tape (CT)
10,000 : $0.03486
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V350mA (Ta)10V1.6Ohm @ 500mA, 10V2.1V @ 250µA0.6 nC @ 4.5 V±20V50 pF @ 10 V-370mW (Ta)150°C (TJ)AutomotiveAEC-Q101Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
3-XQFN
NX7002BKMBYL
MOSFET N-CH 60V 350MA DFN1006B-3
Nexperia USA Inc.
38,152
In Stock
1 : $0.32000
Cut Tape (CT)
10,000 : $0.04152
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V350mA (Ta)5V, 10V2.8Ohm @ 200mA, 10V2.1V @ 250µA1 nC @ 10 V±20V23.6 pF @ 10 V-350mW (Ta), 3.1W (Tc)-55°C ~ 150°C (TJ)--Surface MountDFN1006B-33-XFDFN
35,632
In Stock
1 : $0.36000
Cut Tape (CT)
4,000 : $0.06027
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)50 V350mA (Ta)2.5V, 10V1.6Ohm @ 500mA, 10V1.5V @ 250µA1 nC @ 4.5 V±20V50 pF @ 25 V-223mW (Ta)-55°C ~ 150°C (TJ)--Surface MountSOT-523 Flat LeadsSC-89, SOT-490
34,482
In Stock
1 : $0.39000
Cut Tape (CT)
4,000 : $0.10644
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)50 V350mA (Ta)2.5V, 10V1.6Ohm @ 500mA, 10V1.5V @ 250µA1 nC @ 4.5 V±20V50 pF @ 25 V-223mW (Ta)-55°C ~ 150°C (TJ)AutomotiveAEC-Q101Surface MountSOT-523 Flat LeadsSC-89, SOT-490
SC-89-3_463C
SI1013X-T1-GE3
MOSFET P-CH 20V 350MA SC89-3
Vishay Siliconix
19,372
In Stock
1 : $0.42000
Cut Tape (CT)
3,000 : $0.14153
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V350mA (Ta)1.8V, 4.5V1.2Ohm @ 350mA, 4.5V450mV @ 250µA (Min)1.5 nC @ 4.5 V±6V--250mW (Ta)-55°C ~ 150°C (TJ)--Surface MountSC-89-3SC-89, SOT-490
SOT-223-4
BSP89H6327XTSA1
MOSFET N-CH 240V 350MA SOT223-4
Infineon Technologies
7,282
In Stock
1 : $0.57000
Cut Tape (CT)
1,000 : $0.24240
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)240 V350mA (Ta)4.5V, 10V6Ohm @ 350mA, 10V1.8V @ 108µA6.4 nC @ 10 V±20V140 pF @ 25 V-1.8W (Ta)-55°C ~ 150°C (TJ)--Surface MountPG-SOT223-4TO-261-4, TO-261AA
SOT-223-4
BSP88H6327XTSA1
MOSFET N-CH 240V 350MA SOT223-4
Infineon Technologies
23,670
In Stock
1 : $0.63000
Cut Tape (CT)
1,000 : $0.23764
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)240 V350mA (Ta)2.8V, 10V6Ohm @ 350mA, 10V1.4V @ 108µA6.8 nC @ 10 V±20V95 pF @ 25 V-1.8W (Ta)-55°C ~ 150°C (TJ)--Surface MountPG-SOT223-4TO-261-4, TO-261AA
SC-101 SOT-883
NX5008NBKMYL
MOSFET N-CH 50V 350MA DFN1006-3
Nexperia USA Inc.
31,123
In Stock
1 : $0.36000
Cut Tape (CT)
10,000 : $0.04636
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)50 V350mA (Ta)-2.8Ohm @ 200mA, 4.5V900mV @ 250µA0.7 nC @ 4.5 V±8V29 pF @ 25 V-350mW (Ta), 2.8W (Tc)-55°C ~ 150°C (TJ)--Surface MountSOT-883SC-101, SOT-883
4-DIP
IRFD310PBF
MOSFET N-CH 400V 350MA 4DIP
Vishay Siliconix
2,315
In Stock
1 : $1.57000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)400 V350mA (Ta)10V3.6Ohm @ 210mA, 10V4V @ 250µA17 nC @ 10 V±20V170 pF @ 25 V-1W (Ta)-55°C ~ 150°C (TJ)--Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
SOT-23-3
DMN63D8L-13
MOSFET N-CH 30V 350MA SOT23-3
Diodes Incorporated
8,387
In Stock
1 : $0.24000
Cut Tape (CT)
10,000 : $0.03073
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V350mA (Ta)2.5V, 10V2.8Ohm @ 250mA, 10V1.5V @ 250µA0.9 nC @ 10 V±20V23.2 pF @ 25 V-350mW (Ta)-55°C ~ 150°C (TJ)--Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
SOT-523
DMN31D6UT-7
MOSFET N-CH 30V 350MA SOT523
Diodes Incorporated
3,000
In Stock
960,000
Factory
1 : $0.31000
Cut Tape (CT)
3,000 : $0.05290
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V350mA (Ta)2.5V, 4.5V1.5Ohm @ 100mA, 4.5V1.4V @ 250µA0.35 nC @ 4.5 V±12V13.6 pF @ 15 V-320mW-55°C ~ 150°C (TJ)--Surface MountSOT-523SOT-523
DFN0606-3
NX5008NBKHH
MOSFET N-CH 50V 350MA DFN0606-3
Nexperia USA Inc.
17,945
In Stock
1 : $0.36000
Cut Tape (CT)
10,000 : $0.04722
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)50 V350mA (Ta)-2.8Ohm @ 200mA, 4.5V900mV @ 250µA0.7 nC @ 4.5 V±8V30 pF @ 25 V-380mW (Ta), 2.8W (Tc)-55°C ~ 150°C (TJ)--Surface MountDFN0606-33-XFDFN
SOT-223-4
BSP88E6327
MOSFET N-CH 240V 350MA SOT223-4
Infineon Technologies
0
In Stock
259,952
Marketplace
1,484 : $0.20000
Bulk
Tape & Reel (TR)
Bulk
ObsoleteN-ChannelMOSFET (Metal Oxide)240 V350mA (Ta)2.8V, 4.5V6Ohm @ 350mA, 10V1.4V @ 108µA6.8 nC @ 10 V±20V95 pF @ 25 V-1.7W (Ta)-55°C ~ 150°C (TJ)--Surface MountPG-SOT223-4TO-261-4, TO-261AA
INFINFBCP49H6419XTMA1
BSP129L6906
N-CHANNEL POWER MOSFET
Infineon Technologies
16,000
Marketplace
944 : $0.32000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)240 V350mA (Ta)0V, 10V6Ohm @ 350mA, 10V1V @ 108µA5.7 nC @ 5 V±20V108 pF @ 25 VDepletion Mode1.8W (Ta)-55°C ~ 150°C (TJ)--Surface MountPG-SOT223-4-21TO-261-4, TO-261AA
SOT-223-4
BSP129L6327HTSA1
MOSFET N-CH 240V 350MA SOT223-4
Infineon Technologies
0
In Stock
237,893
Marketplace
799 : $0.38000
Bulk
Tape & Reel (TR)
Bulk
ObsoleteN-ChannelMOSFET (Metal Oxide)240 V350mA (Ta)0V, 10V6Ohm @ 350mA, 10V1V @ 108µA5.7 nC @ 5 V±20V108 pF @ 25 VDepletion Mode1.8W (Ta)-55°C ~ 150°C (TJ)--Surface MountPG-SOT223-4-21TO-261-4, TO-261AA
PowerTrench Series SC-89-3
FDY100PZ
MOSFET P-CH 20V 350MA SC89-3
onsemi
20,552
In Stock
1 : $0.41000
Cut Tape (CT)
3,000 : $0.13855
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteP-ChannelMOSFET (Metal Oxide)20 V350mA (Ta)1.8V, 4.5V1.2Ohm @ 350mA, 4.5V1.5V @ 250µA1.4 nC @ 4.5 V±8V100 pF @ 10 V-625mW (Ta)-55°C ~ 150°C (TJ)--Surface MountSC-89-3SC-89, SOT-490
0.4A 400V 3.600 OHM N-CHANNEL
IRFD310
0.4A 400V 3.600 OHM N-CHANNEL
Harris Corporation
3,189
Marketplace
243 : $1.24000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)400 V350mA (Ta)10V3.6Ohm @ 210mA, 10V4V @ 250µA17 nC @ 10 V±20V170 pF @ 25 V-1W (Ta)-55°C ~ 150°C (TJ)--Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
INFINFBFR843EL3E6327XTSA1
NX7002BKMBYL
NEXPERIA NX7002B - 60V, N-CHANNE
NXP Semiconductors
90,003
Marketplace
10,886 : $0.03000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)60 V350mA (Ta)5V, 10V2.8Ohm @ 200mA, 10V2.1V @ 250µA1 nC @ 10 V±20V23.6 pF @ 10 V-350mW (Ta), 3.1W (Tc)-55°C ~ 150°C (TJ)--Surface MountDFN1006B-33-XFDFN
Showing
of 50

350mA (Ta) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.