34A (Tc) Single FETs, MOSFETs

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of 158

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TPH9R506PL,LQ MOSFET N-CH 60V 34A 8SOP Toshiba Semiconductor and Storage	31,308 In Stock	1 : $1.42000 Cut Tape (CT) 3,000 : $0.35970 Tape & Reel (TR)	-	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	34A (Tc)	4.5V, 10V	9.5mOhm @ 17A, 10V	2.5V @ 200µA	21 nC @ 10 V	±20V	1910 pF @ 30 V	-	830mW (Ta), 81W (Tc)	175°C	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
PHB32N06LT,118 MOSFET N-CH 60V 34A D2PAK Nexperia USA Inc.	1,400 In Stock	1 : $1.79000 Cut Tape (CT) 800 : $0.56825 Tape & Reel (TR)	-	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	34A (Tc)	4.5V, 5V	37mOhm @ 20A, 10V	2V @ 1mA	17 nC @ 5 V	±15V	1280 pF @ 25 V	-	97W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPD320N20N3GATMA1 MOSFET N-CH 200V 34A TO252-3 Infineon Technologies	22,547 In Stock	1 : $3.60000 Cut Tape (CT) 2,500 : $1.17199 Tape & Reel (TR)	-	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	34A (Tc)	10V	32mOhm @ 34A, 10V	4V @ 90µA	29 nC @ 10 V	±20V	2350 pF @ 100 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB320N20N3GATMA1 MOSFET N-CH 200V 34A D2PAK Infineon Technologies	5,957 In Stock	1 : $3.73000 Cut Tape (CT) 1,000 : $1.25569 Tape & Reel (TR)	-	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	34A (Tc)	10V	32mOhm @ 34A, 10V	4V @ 90µA	29 nC @ 10 V	±20V	2350 pF @ 100 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFI4321PBF MOSFET N-CH 150V 34A TO220AB FP Infineon Technologies	4,174 In Stock	1 : $3.76000 Tube	Tariff may apply if shipping to the United States	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	34A (Tc)	10V	16mOhm @ 20A, 10V	5V @ 250µA	110 nC @ 10 V	±30V	4440 pF @ 50 V	-	46W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
AIMDQ75R060M1HXUMA1 SICFET N-CH 750V PG-HDSOP-22 Infineon Technologies	967 In Stock	1 : $8.06000 Cut Tape (CT) 750 : $3.46488 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	34A (Tc)	15V, 20V	78mOhm @ 11.1A, 18V	5.6V @ 4mA	23 nC @ 18 V	+23V, -5V	779 pF @ 500 V	-	167W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
IMYH200R075M1HXKSA1 SIC DISCRETE Infineon Technologies	184 In Stock	1 : $17.83000 Tube	-	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	2000 V	34A (Tc)	15V, 18V	98mOhm @ 13A, 18V	5.5V @ 7.7mA	64 nC @ 18 V	+20V, -7V	-	-	267W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-U04	TO-247-4
TSM230N06CP ROG MOSFET N-CHANNEL 60V 34A TO252 Taiwan Semiconductor Corporation	29,099 In Stock	1 : $1.18000 Cut Tape (CT) 2,500 : $0.25886 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	34A (Tc)	4.5V, 10V	23mOhm @ 20A, 10V	2.5V @ 250µA	28 nC @ 10 V	±20V	1680 pF @ 25 V	-	104W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
TPN19008QM,LQ MOSFET N-CH 80V 34A 8TSON Toshiba Semiconductor and Storage	7,892 In Stock	1 : $1.23000 Cut Tape (CT) 3,000 : $0.30435 Tape & Reel (TR)	-	U-MOSX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	34A (Tc)	6V, 10V	19mOhm @ 17A, 10V	3.5V @ 200µA	16 nC @ 10 V	±20V	1400 pF @ 40 V	-	630mW (Ta), 57W (Tc)	175°C	-	-	Surface Mount	8-TSON Advance (3.1x3.1)	8-PowerVDFN
BUK9Y30-75B,115 MOSFET N-CH 75V 34A LFPAK56 Nexperia USA Inc.	240 In Stock	1 : $1.60000 Cut Tape (CT) 1,500 : $0.45829 Tape & Reel (TR)	-	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	75 V	34A (Tc)	5V	28mOhm @ 15A, 10V	2V @ 1mA	19 nC @ 5 V	±15V	2070 pF @ 25 V	-	85W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SI4838BDY-T1-GE3 MOSFET N-CH 12V 34A 8SO Vishay Siliconix	15,008 In Stock	1 : $2.17000 Cut Tape (CT) 2,500 : $0.62310 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	12 V	34A (Tc)	1.8V, 4.5V	2.7mOhm @ 15A, 4.5V	1V @ 250µA	84 nC @ 4.5 V	±8V	5760 pF @ 6 V	-	2.5W (Ta), 5.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TPH8R008NH,L1Q MOSFET N-CH 80V 34A 8SOP Toshiba Semiconductor and Storage	6,623 In Stock	1 : $2.36000 Cut Tape (CT) 5,000 : $0.66000 Tape & Reel (TR)	-	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	34A (Tc)	10V	8mOhm @ 17A, 10V	4V @ 500µA	35 nC @ 10 V	±20V	3000 pF @ 40 V	-	1.6W (Ta), 61W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
IPP320N20N3GXKSA1 MOSFET N-CH 200V 34A TO220-3 Infineon Technologies	15,626 In Stock	1 : $3.36000 Tube	-	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	34A (Tc)	10V	32mOhm @ 34A, 10V	4V @ 90µA	29 nC @ 10 V	±20V	2350 pF @ 100 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
STF43N60DM2 MOSFET N-CH 600V 34A TO220FP STMicroelectronics	238 In Stock	1 : $5.75000 Tube	Tariff may apply if shipping to the United States	MDmesh™ DM2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	93mOhm @ 17A, 10V	5V @ 250µA	56 nC @ 10 V	±25V	2500 pF @ 100 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP	TO-220-3 Full Pack
STB40N60M2 MOSFET N-CH 600V 34A D2PAK STMicroelectronics	2,011 In Stock	1 : $5.89000 Cut Tape (CT) 1,000 : $2.28100 Tape & Reel (TR)	Tariff may apply if shipping to the United States	MDmesh™ II Plus	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	88mOhm @ 17A, 10V	4V @ 250µA	57 nC @ 10 V	±25V	2500 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STB42N60M2-EP MOSFET N-CH 600V 34A D2PAK STMicroelectronics	285 In Stock	1 : $6.52000 Cut Tape (CT) 1,000 : $2.61462 Tape & Reel (TR)	Tariff may apply if shipping to the United States	MDmesh™ M2-EP	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	87mOhm @ 17A, 10V	4.75V @ 250µA	55 nC @ 10 V	±25V	2370 pF @ 100 V	-	250W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STB45N60DM2AG MOSFET N-CH 600V 34A D2PAK STMicroelectronics	7,108 In Stock	1 : $7.57000 Cut Tape (CT) 1,000 : $3.18400 Tape & Reel (TR)	Tariff may apply if shipping to the United States	MDmesh™ DM2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	90mOhm @ 17A, 10V	5V @ 250µA	56 nC @ 10 V	±25V	2500 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP34N65X2 MOSFET N-CH 650V 34A TO220AB IXYS	5,167 In Stock	1 : $8.19000 Tube	-	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	105mOhm @ 17A, 10V	5.5V @ 2.5mA	56 nC @ 10 V	±30V	3330 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
STO67N60M6 MOSFET N-CH 600V 34A TOLL STMicroelectronics	1,516 In Stock	1 : $8.20000 Cut Tape (CT) 1,800 : $3.54038 Tape & Reel (TR)	-	MDmesh™ M6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	54mOhm @ 26A, 10V	4.75V @ 250µA	72.5 nC @ 10 V	±25V	3400 pF @ 100 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLL (HV)	8-PowerSFN
NTHL070N120M3S SIC MOS TO247-3L 70MOHM 1200V M3 onsemi	3,651 In Stock	1 : $8.47000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	34A (Tc)	18V	87mOhm @ 15A, 18V	4.4V @ 7mA	57 nC @ 18 V	+22V, -10V	1230 pF @ 800 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H050G4QS-TR 650 V 34 A GAN FET Renesas Electronics Corporation	1,477 In Stock	1 : $9.37000 Cut Tape (CT) 2,000 : $4.22500 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN
TP65H050G4WS 650 V 34 A GAN FET Renesas Electronics Corporation	449 In Stock	1 : $10.65000 Tube	-	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
E3M0075120J2-TR 75m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	1,020 In Stock	1 : $12.27000 Cut Tape (CT) 800 : $6.01250 Tape & Reel (TR)	Tariff may apply if shipping to the United States	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	34A (Tc)	15V	97.5mOhm @ 17.9A, 15V	3.8V @ 5mA	52 nC @ 15 V	+19V, -8V	1480 pF @ 1000 V	-	172W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TP65H050G4BS 650 V 34 A GAN FET Renesas Electronics Corporation	488 In Stock	1 : $14.38000 Tube	Tariff may apply if shipping to the United States	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
UF4C120053K3S 1200V/53MOHM, SIC, FAST CASCODE, onsemi	307 In Stock 9,600 Factory	1 : $15.12000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	34A (Tc)	12V	67mOhm @ 20A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1370 pF @ 800 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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