33A (Tc) Single FETs, MOSFETs

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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
IRFB4127PBFXKMA1
MOSFET N-CH 100V 33A TO220AB
Infineon Technologies
63,571
In Stock
1 : $0.94000
Tube
Tariff may apply if shipping to the United States
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-252AA (DPAK)
MOSFET N-CH 150V 33A DPAK
Infineon Technologies
8,874
In Stock
1 : $1.62000
Cut Tape (CT)
3,000 : $0.54654
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
26 nC @ 10 V
±20V
1750 pF @ 50 V
-
144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 100V 33A D2PAK
Infineon Technologies
1,773
In Stock
1 : $1.85000
Cut Tape (CT)
800 : $0.57223
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TDSON-8-1
MOSFET N-CH 150V 33A 8TDSON
Infineon Technologies
9,020
In Stock
1 : $2.39000
Cut Tape (CT)
5,000 : $0.66925
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
8V, 10V
36mOhm @ 25A, 10V
4V @ 45µA
15 nC @ 10 V
±20V
1190 pF @ 75 V
-
74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
TO-263
MOSFET N-CH 250V 33A D2PAK
onsemi
18,465
In Stock
1 : $2.48000
Cut Tape (CT)
800 : $1.04860
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220F-3
MOSFET N-CH 250V 33A TO220F
onsemi
14,976
In Stock
1 : $2.86000
Tube
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
37W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F-3
TO-220-3 Full Pack
10-PowerSOP Module
MOSFET N-CH 600V 33A HDSOP-10
Infineon Technologies
2,181
In Stock
1 : $5.24000
Cut Tape (CT)
1,700 : $1.97312
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
-
90mOhm @ 9.3A, 10V
4.5V @ 470µA
42 nC @ 10 V
±20V
1747 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
TO-247-3L
SICFET N-CH 1200V 33A TO247-3
onsemi
4,001
In Stock
1 : $17.12000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
33A (Tc)
12V
100mOhm @ 20A, 12V
6V @ 10mA
51 nC @ 15 V
±25V
1500 pF @ 100 V
-
254.2W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PowerDI5060 UX
MOSFET BVDSS: 61V~100V POWERDI50
Diodes Incorporated
2,271
In Stock
2,500
Factory
1 : $0.98000
Cut Tape (CT)
2,500 : $0.23811
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
4.5V, 10V
32mOhm @ 5A, 10V
2.5V @ 250µA
11.9 nC @ 10 V
±20V
683 pF @ 50 V
-
3.4W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 150V 33A D2PAK
Infineon Technologies
1,190
In Stock
1 : $1.11000
Cut Tape (CT)
800 : $0.70686
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
40 nC @ 10 V
±20V
1750 pF @ 50 V
-
144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PSMNR82-30YLEX
MOSFET N-CH 40V 33A LFPAK56
Nexperia USA Inc.
829
In Stock
1 : $1.35000
Cut Tape (CT)
1,500 : $0.36686
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
33A (Tc)
5V
17mOhm @ 10A, 10V
2.1V @ 1mA
7 nC @ 5 V
±10V
824 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO-220-3
MOSFET N-CH 250V 33A TO220-3
onsemi
691
In Stock
1 : $2.14000
Tube
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-247-3 AC EP
MOSFET N-CH 100V 33A TO247AC
Infineon Technologies
1,393
In Stock
1 : $2.63000
Tube
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
52mOhm @ 16A, 10V
4V @ 250µA
94 nC @ 10 V
±20V
1400 pF @ 25 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
8-PowerVDFN
PB-F POWER MOSFET TRANSISTOR DSO
Toshiba Semiconductor and Storage
7,100
In Stock
1 : $3.03000
Cut Tape (CT)
5,000 : $1.20375
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
33A (Tc)
10V
29mOhm @ 16.5A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 100 V
-
800mW (Ta), 142W (Tc)
150°C
-
-
Surface Mount
8-DSOP Advance
8-PowerVDFN
PG-VSON-4
MOSFET N-CH 600V 33A 4VSON
Infineon Technologies
4,998
In Stock
1 : $4.19000
Cut Tape (CT)
3,000 : $2.22613
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
75mOhm @ 15.1A, 10V
4.5V @ 760µA
67 nC @ 10 V
±20V
2721 pF @ 400 V
-
189W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
PG-VSON-4
MOSFET N-CH 600V 33A 4VSON
Infineon Technologies
3,569
In Stock
1 : $4.50000
Cut Tape (CT)
3,000 : $1.59025
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
105mOhm @ 10.5A, 10V
4V @ 530µA
45 nC @ 10 V
±20V
1952 pF @ 400 V
-
137W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
PG-HSOF-8-2
MOSFET N-CH 600V 33A 8HSOF
Infineon Technologies
170
In Stock
1 : $5.16000
Cut Tape (CT)
2,000 : $2.27300
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
75mOhm @ 11.4A, 10V
4.5V @ 570µA
51 nC @ 10 V
±20V
2103 pF @ 400 V
-
188W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
TO-263-3
MOSFET N-CH 600V 33A D2PAK
Vishay Siliconix
1,797
In Stock
1 : $5.81000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
99mOhm @ 16.5A, 10V
4V @ 250µA
150 nC @ 10 V
±30V
3508 pF @ 100 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
MOSFET N-CH 650V 33A TO263-3
Infineon Technologies
2,829
In Stock
1 : $6.86000
Cut Tape (CT)
1,000 : $3.11150
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
33A (Tc)
10V
65mOhm @ 17.1A, 10V
4.5V @ 200µA
64 nC @ 10 V
±20V
3020 pF @ 400 V
-
171W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3
MOSFET N-CH 600V 33A D2PAK
Vishay Siliconix
966
In Stock
1 : $7.49000
Bulk
Tariff may apply if shipping to the United States
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
98mOhm @ 16.5A, 10V
4V @ 250µA
155 nC @ 10 V
±30V
3454 pF @ 100 V
-
278W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D²PAK
MOSFET N-CH 650V 33A D2PAK
STMicroelectronics
2,182
In Stock
1 : $9.12000
Cut Tape (CT)
1,000 : $5.91488
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Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
33A (Tc)
10V
79mOhm @ 16.5A, 10V
5V @ 250µA
100 nC @ 10 V
±25V
4650 pF @ 100 V
-
190W (Tc)
150°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
238~SOT227B~~4
MOSFET N-CH 900V 33A SOT227B
IXYS
554
In Stock
1 : $41.34000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
900 V
33A (Tc)
10V
210mOhm @ 20A, 10V
6.5V @ 1mA
230 nC @ 10 V
±30V
14000 pF @ 25 V
-
695W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SIR401DP-T1-GE3
MOSFET N-CH 30V 33A PPAK SO-8
Vishay Siliconix
1,490
In Stock
1 : $0.88000
Cut Tape (CT)
3,000 : $0.25480
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Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
33A (Tc)
4.5V, 10V
7.5mOhm @ 10A, 10V
2.4V @ 250µA
21.5 nC @ 10 V
+20V, -16V
1000 pF @ 15 V
-
3.3W (Ta), 14.7W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SI9407BDY-T1-GE3
MOSFET N-CH 40V 33A 8SO
Vishay Siliconix
1,772
In Stock
1 : $1.54000
Cut Tape (CT)
2,500 : $1.13680
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Active
N-Channel
MOSFET (Metal Oxide)
40 V
33A (Tc)
4.5V, 10V
3.8mOhm @ 20A, 10V
2.8V @ 250µA
122 nC @ 10 V
±20V
5670 pF @ 20 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
2,400
In Stock
1 : $2.33000
Cut Tape (CT)
2,500 : $0.67757
Tape & Reel (TR)
-
-
Tape & Reel (TR)
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Active
N-Channel
MOSFET (Metal Oxide)
60 V
33A (Tc)
5V, 10V
14mOhm @ 16.5A, 10V
2.5V @ 250µA
78 nC @ 10 V
±20V
3900 pF @ 25 V
-
1W (Ta), 97W (Tc)
175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-HSON
8-SMD, Flat Lead Exposed Pad
Showing
of 149

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.