30A (Ta), 40A (Tc) Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon Technologiesonsemi
Series
Dual Cool™, PowerTrench®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Rds On (Max) @ Id, Vgs
1.5mOhm @ 20A, 10V2.2mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3400 pF @ 15 V5170 pF @ 15 V
Power Dissipation (Max)
2.1W (Ta), 69W (Tc)3W (Ta), 78W (Tc)
Supplier Device Package
Dual Cool ™ 33PG-TSDSON-8-FL
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
Dual Cool ™ 33
FDMC7660DC
MOSFET N-CH 30V 30A/40A DLCOOL33
onsemi
6,114
In Stock
3,000
Factory
1 : $1.73000
Cut Tape (CT)
3,000 : $0.77911
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Ta), 40A (Tc)
4.5V, 10V
2.2mOhm @ 22A, 10V
2.5V @ 250µA
76 nC @ 10 V
±20V
5170 pF @ 15 V
-
3W (Ta), 78W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
Dual Cool ™ 33
8-PowerTDFN
TSDSON-8
BSZ0500NSIATMA1
MOSFET N-CH 30V 30A/40A TSDSON
Infineon Technologies
9,929
In Stock
1 : $2.23000
Cut Tape (CT)
5,000 : $0.96598
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
30A (Ta), 40A (Tc)
4.5V, 10V
1.5mOhm @ 20A, 10V
2V @ 250µA
52 nC @ 10 V
±20V
3400 pF @ 15 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
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30A (Ta), 40A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.