3-UDFN Single FETs, MOSFETs

Results: 12
Stocking Options
Environmental Options
Media
Exclude
12Results
Applied FiltersRemove All

Showing
of 12
Mfr Part #
Quantity Available
Price
Tariff Status
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
3-UDFN
MOSFET N-CH 60V 310MA 3DFN
Diodes Incorporated
75,545
In Stock
63,000
Factory
1 : $0.11000
Cut Tape (CT)
3,000 : $0.04231
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
1.8V, 4V
2Ohm @ 100mA, 4V
1V @ 250µA
0.5 nC @ 4.5 V
±20V
31 pF @ 25 V
-
480mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
3-UDFN
MOSFET N-CH 20V 900MA 3DFN
Diodes Incorporated
24,598
In Stock
519,000
Factory
1 : $0.31000
Cut Tape (CT)
3,000 : $0.06194
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
900mA (Ta)
1.5V, 4.5V
600mOhm @ 200mA, 4.5V
1V @ 250µA
0.7 nC @ 4.5 V
±12V
52 pF @ 16 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
3-UDFN
MOSFET N-CH 60V 400MA 3DFN
Diodes Incorporated
2,560
In Stock
1 : $0.35000
Cut Tape (CT)
3,000 : $0.06369
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
1.8V, 4V
2Ohm @ 100mA, 4V
1V @ 250µA
0.55 nC @ 4.5 V
±20V
36 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
3-UDFN
MOSFET N-CH 60V 540MA 3DFN
Diodes Incorporated
19,830
In Stock
498,000
Factory
1 : $0.40000
Cut Tape (CT)
3,000 : $0.08299
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
540mA (Ta)
5V, 10V
2Ohm @ 500mA, 10V
2.5V @ 1mA
0.87 nC @ 10 V
±20V
30.2 pF @ 25 V
-
430mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
ZXTP26020DMFTA
MOSFET P-CH 20V 1.5A 3DFN1411
Diodes Incorporated
18,904
In Stock
1 : $0.58000
Cut Tape (CT)
3,000 : $0.12703
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
1.8V, 4.5V
150mOhm @ 950mA, 4.5V
1V @ 250µA
-
±12V
320 pF @ 16 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN1411-3
3-UDFN
3-UDFN
MOSFET P-CH 20V 600MA 3DFN
Diodes Incorporated
30,041
In Stock
960,000
Factory
1 : $0.31000
Cut Tape (CT)
3,000 : $0.06258
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.2V, 4.5V
1Ohm @ 100mA, 4.5V
1V @ 250µA
0.8 nC @ 8 V
±8V
46.1 pF @ 10 V
-
400mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
3-UDFN
MOSFET P-CH 20V 820MA 3DFN
Diodes Incorporated
3,355
In Stock
2,766,000
Factory
1 : $0.49000
Cut Tape (CT)
3,000 : $0.10511
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
820mA (Ta)
1.5V, 4.5V
495mOhm @ 800mA, 4.5V
1.2V @ 250µA
3 nC @ 4.5 V
±8V
80 pF @ 10 V
-
490mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
3-UDFN
MOSFET N-CH 60V 400MA 3DFN
Diodes Incorporated
9,911
In Stock
2,640,000
Factory
1 : $0.31000
Cut Tape (CT)
10,000 : $0.05333
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
400mA (Ta)
1.8V, 4V
2Ohm @ 100mA, 4V
1V @ 250µA
0.55 nC @ 4.5 V
±20V
36 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
3-UDFN
MOSFET N-CH 20V 900MA 3DFN
Diodes Incorporated
6,529
In Stock
1 : $0.43000
Cut Tape (CT)
3,000 : $0.09073
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
900mA (Ta)
1.5V, 4.5V
600mOhm @ 200mA, 4.5V
1V @ 250µA
500 nC @ 4.5 V
±12V
37 pF @ 16 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
3-UDFN
MOSFET N-CH 20V 1.21A 3DFN
Diodes Incorporated
408
In Stock
234,000
Factory
1 : $0.53000
Cut Tape (CT)
3,000 : $0.11434
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.21A (Ta)
1.5V, 4.5V
200mOhm @ 900mA, 4.5V
950mV @ 250µA
2 nC @ 4.5 V
±8V
67.62 pF @ 25 V
-
470mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
3-UDFN
MOSFET P-CH 20V 600MA 3DFN
Diodes Incorporated
0
In Stock
Obsolete
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.2V, 4.5V
1Ohm @ 100mA, 4.5V
1V @ 250µA
0.8 nC @ 8 V
±8V
46.1 pF @ 10 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
3-UDFN
MOSFET N-CH X1-DFN1212-3
Diodes Incorporated
0
In Stock
1,410,000
Factory
Obsolete
-
-
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Ta)
1.8V, 4V
2Ohm @ 100mA, 4V
1V @ 250µA
0.5 nC @ 4.5 V
±20V
31 pF @ 25 V
-
480mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1212-3
3-UDFN
Showing
of 12

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.