28A Single FETs, MOSFETs

Results: 3
Manufacturer
Micro Commercial CoNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V100 V150 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V
Rds On (Max) @ Id, Vgs
7mOhm @ 10A, 5V40mOhm @ 20A, 10V52mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.1V @ 5mA2.5V @ 250µA2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.6 nC @ 5 V19.3 nC @ 10 V40 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
865 pF @ 85 V1050 pF @ 30 V2100 pF @ 50 V
Power Dissipation (Max)
28W60W96W (Tj)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
3-FCLGA (3.2x2.2)DFN5060DPAK
Package / Case
3-VLGA8-PowerTDFNTO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
MBRD6100CT-TP
MCU28P10Y-TP
P-CHANNEL MOSFET,DPAK
Micro Commercial Co
4,463
In Stock
1 : $2.03000
Cut Tape (CT)
2,500 : $0.91344
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
28A
4.5V, 10V
52mOhm @ 15A, 10V
2.5V @ 250µA
40 nC @ 10 V
±20V
2100 pF @ 50 V
-
96W (Tj)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
DFN5060
MCAC28P06Y-TP
P-CHANNEL MOSFET, DFN5060
Micro Commercial Co
3,803
In Stock
1 : $0.91000
Cut Tape (CT)
5,000 : $0.32724
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
28A
-
40mOhm @ 20A, 10V
2.7V @ 250µA
19.3 nC @ 10 V
±20V
1050 pF @ 30 V
-
60W
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DFN5060
8-PowerTDFN
GAN7R0-150LBEZ
GAN7R0-150LBEZ
150 V, 7 MOHM GALLIUM NITRIDE (G
Nexperia USA Inc.
3,544
In Stock
1 : $3.05000
Cut Tape (CT)
2,500 : $1.26420
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
150 V
28A
5V
7mOhm @ 10A, 5V
2.1V @ 5mA
7.6 nC @ 5 V
+6V, -4V
865 pF @ 85 V
-
28W
-40°C ~ 150°C (TJ)
-
-
Surface Mount
3-FCLGA (3.2x2.2)
3-VLGA
Showing
of 3

28A Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.