27A (Tc) Single FETs, MOSFETs

Results: 105
Manufacturer
Alpha & Omega Semiconductor Inc.Cambridge GaN DevicesDiodes IncorporatedFairchild SemiconductorGoford SemiconductorGood-Ark SemiconductorInfineon TechnologiesIXYSLittelfuse Inc.Microchip TechnologyMicrosemi CorporationNexperia USA Inc.
Series
-aMOS™CoolMOS™ CFD7CoolMOS™ P7HEXFET®HiPerFET™HiPerFET™, PolarHiPerFET™, Q ClassICeGaN™MDmesh™ IIMDmesh™ VOptiMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
20 V30 V55 V60 V75 V80 V100 V150 V200 V250 V500 V600 V650 V800 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V6V, 10V10V10V, 12V10V, 15V11V12V20V-
Rds On (Max) @ Id, Vgs
6mOhm @ 13.5A, 10V6.2mOhm @ 27A, 10V13mOhm @ 6.5A, 10V19mOhm @ 13.5A, 10V20mOhm @ 13.5A, 10V25mOhm @ 5A, 10V25mOhm @ 7A, 10V25.7mOhm @ 27A, 10V26mOhm @ 27A, 10V30mOhm @ 10A, 10V32mOhm @ 10A, 10V33mOhm @ 27A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA2V @ 31µA2.3V @ 200µA2.4V @ 250µA2.5V @ 250µA2.6V @ 400uA3V @ 250µA3.5V @ 250µA4V @ 11µA4V @ 1mA4V @ 2.5mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 5 V6 nC @ 12 V10.4 nC @ 10 V12 nC @ 4.5 V14 nC @ 8 V15 nC @ 10 V17 nC @ 10 V18.6 nC @ 10 V19 nC @ 10 V20 nC @ 10 V22 nC @ 10 V23 nC @ 10 V
Vgs (Max)
±16V±18V+20V, -1V±20V+22V, -6V±22V±25V±30V-
Input Capacitance (Ciss) (Max) @ Vds
475 pF @ 25 V630 pF @ 25 V631 pF @ 40 V650 pF @ 30 V700 pF @ 25 V760 pF @ 100 V800 pF @ 25 V810 pF @ 25 V965 pF @ 25 V989 pF @ 75 V1125 pF @ 800 V1130 pF @ 400 V
FET Feature
-Current Sensing
Power Dissipation (Max)
700mW (Ta), 32W (Tc)1.5W (Ta)1.5W (Ta), 52W (Tc)1.6W (Ta)2.8W (Ta)3.75W (Ta), 120W (Tc)3.75W (Ta), 150W (Tc)30W (Tc)36W (Tc)40W (Tc)45W (Tc)50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-50°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountSurface Mount, Wettable FlankThrough Hole
Supplier Device Package
8-DFN3333 (3.3x3.3)8-HVSON (3.3x3.3)8-HWSON (3.3x3.3)8-TSON Advance (3.1x3.1)16-DFN (8x8)D2PAKD2PAK-7D3PAKDPAKI2PAKIPAK (TO-251AA)ISOPLUS247™
Package / Case
4-PowerTSFN8-PowerTDFN8-PowerVDFN8-VDFN Exposed Pad10-PowerSOP Module16-PowerVDFNPowerPAK® SO-8SOT-227-4, miniBLOCTO-220-3 Full PackTO-220-3TO-247-3 VariantTO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRFR4105TRPBF
MOSFET N-CH 55V 27A DPAK
Infineon Technologies
11,570
In Stock
1 : $1.10000
Cut Tape (CT)
2,000 : $0.45496
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)55 V27A (Tc)10V45mOhm @ 16A, 10V4V @ 250µA34 nC @ 10 V±20V700 pF @ 25 V-68W (Tc)-55°C ~ 175°C (TJ)--Surface MountTO-252AA (DPAK)TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220-3
FQP27P06
MOSFET P-CH 60V 27A TO220-3
onsemi
603
In Stock
1 : $2.10000
Tube
Tube
ActiveP-ChannelMOSFET (Metal Oxide)60 V27A (Tc)10V70mOhm @ 13.5A, 10V4V @ 250µA43 nC @ 10 V±25V1400 pF @ 25 V-120W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220-3TO-220-3
6,190
In Stock
1 : $3.85000
Cut Tape (CT)
800 : $2.32704
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V27A (Tc)10V160mOhm @ 13.5A, 10V4V @ 250µA26 nC @ 10 V±30V1294 pF @ 100 V-357W (Tc)-55°C ~ 150°C (TJ)--Surface MountTO-263 (D2PAK)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3 AC EP
IRFP27N60KPBF
MOSFET N-CH 600V 27A TO247-3
Vishay Siliconix
3,281
In Stock
1 : $9.43000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V27A (Tc)10V220mOhm @ 16A, 10V5V @ 250µA180 nC @ 10 V±30V4660 pF @ 25 V-500W (Tc)-55°C ~ 150°C (TJ)--Through HoleTO-247ACTO-247-3
TO-252-2
DMP3028LK3-13
MOSFET P-CH 30V 27A TO252
Diodes Incorporated
10,824
In Stock
70,000
Factory
1 : $0.60000
Cut Tape (CT)
2,500 : $0.22668
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)30 V27A (Tc)4.5V, 10V25mOhm @ 7A, 10V2.4V @ 250µA22 nC @ 10 V±20V1241 pF @ 15 V-1.6W (Ta)-55°C ~ 150°C (TJ)--Surface MountTO-252-3TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD33CN10NGATMA1
MOSFET N-CH 100V 27A TO252-3
Infineon Technologies
29,907
In Stock
1 : $0.92000
Cut Tape (CT)
2,500 : $0.49338
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V27A (Tc)10V33mOhm @ 27A, 10V4V @ 29µA24 nC @ 10 V±20V1570 pF @ 50 V-58W (Tc)-55°C ~ 175°C (TJ)--Surface MountPG-TO252-3TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263
FQB27P06TM
MOSFET P-CH 60V 27A D2PAK
onsemi
2,039
In Stock
1 : $1.97000
Cut Tape (CT)
800 : $1.10023
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)60 V27A (Tc)10V70mOhm @ 13.5A, 10V4V @ 250µA43 nC @ 10 V±25V1400 pF @ 25 V-3.75W (Ta), 120W (Tc)-55°C ~ 175°C (TJ)--Surface MountTO-263 (D2PAK)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-VSON-4
IPL60R125P7AUMA1
MOSFET N-CH 600V 27A 4VSON
Infineon Technologies
5,531
In Stock
1 : $2.37000
Cut Tape (CT)
3,000 : $1.57550
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)600 V27A (Tc)10V125mOhm @ 8.2A, 10V4V @ 410µA36 nC @ 10 V±20V1544 pF @ 400 V-111W (Tc)-40°C ~ 150°C (TJ)--Surface MountPG-VSON-44-PowerTSFN
UF3C120080B7S
UF3C065080B7S
SICFET N-CH 650V 27A D2PAK-7
Qorvo
2,957
In Stock
1 : $8.85000
Cut Tape (CT)
800 : $5.57520
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelSiCFET (Cascode SiCJFET)650 V27A (Tc)-105mOhm @ 20A, 12V6V @ 10mA23 nC @ 12 V±25V760 pF @ 100 V-136.4W (Tc)-55°C ~ 175°C (TJ)--Surface MountD2PAK-7TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO252-3
IPD22N08S2L50ATMA1
MOSFET N-CH 75V 27A TO252-3
Infineon Technologies
7,500
In Stock
1 : $1.25000
Cut Tape (CT)
2,500 : $0.51713
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)75 V27A (Tc)5V, 10V50mOhm @ 50A, 10V2V @ 31µA33 nC @ 10 V±20V630 pF @ 25 V-75W (Tc)-55°C ~ 175°C (TJ)--Surface MountPG-TO252-3-11TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263
FDB390N15A
MOSFET N-CH 150V 27A D2PAK
onsemi
3,388
In Stock
1 : $2.07000
Cut Tape (CT)
800 : $1.15955
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)150 V27A (Tc)10V39mOhm @ 27A, 10V4V @ 250µA18.6 nC @ 10 V±20V1285 pF @ 75 V-75W (Tc)-55°C ~ 175°C (TJ)--Surface MountTO-263 (D2PAK)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220F
AOTF27S60L
MOSFET N-CH 600V 27A TO220-3F
Alpha & Omega Semiconductor Inc.
4,872
In Stock
1 : $3.85000
Tube
Tube
Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V27A (Tc)10V160mOhm @ 13.5A, 10V4V @ 250µA26 nC @ 10 V±30V1294 pF @ 100 V-50W (Tc)-55°C ~ 150°C (TJ)--Through HoleTO-220FTO-220-3 Full Pack
3,769
In Stock
1 : $3.85000
Tube
Tube
Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V27A (Tc)10V160mOhm @ 13.5A, 10V4V @ 250µA26 nC @ 10 V±30V1294 pF @ 100 V-357W (Tc)-55°C ~ 150°C (TJ)--Through HoleTO-220TO-220-3
TO-247-3 AD Long Lead EP
LSIC1MO120E0120
SICFET N-CH 1200V 27A TO247-3
Littelfuse Inc.
854
In Stock
1 : $16.68000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V27A (Tc)20V150mOhm @ 14A, 20V4V @ 7mA80 nC @ 20 V+22V, -6V1125 pF @ 800 V-139W (Tc)-55°C ~ 150°C (TJ)--Through HoleTO-247ADTO-247-3
TO-264
IXFK27N80Q
MOSFET N-CH 800V 27A TO264AA
IXYS
181
In Stock
1 : $29.11000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)800 V27A (Tc)10V320mOhm @ 500mA, 10V4.5V @ 4mA170 nC @ 10 V±20V7600 pF @ 25 V-500W (Tc)-55°C ~ 150°C (TJ)--Through HoleTO-264AA (IXFK)TO-264-3, TO-264AA
TO-252 D-Pak Top
DMP3028LK3Q-13
MOSFET P-CHANNEL 30V 27A TO252
Diodes Incorporated
2,395
In Stock
35,000
Factory
1 : $0.62000
Cut Tape (CT)
2,500 : $0.23632
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)30 V27A (Tc)4.5V, 10V25mOhm @ 7A, 10V2.4V @ 250µA22 nC @ 10 V±20V1241 pF @ 15 V-2.8W (Ta)-55°C ~ 150°C (TJ)AutomotiveAEC-Q101Surface MountTO-252 (DPAK)TO-252-3, DPAK (2 Leads + Tab), SC-63
8-PowerVDFN_BOTTOM
DMTH8028LFVWQ-13
MOSFET BVDSS: 61V~100V POWERDI33
Diodes Incorporated
4,359
In Stock
828,000
Factory
1 : $0.70000
Cut Tape (CT)
3,000 : $0.26583
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V27A (Tc)4.5V, 10V25mOhm @ 5A, 10V2.5V @ 250µA10.4 nC @ 10 V±20V631 pF @ 40 V-1.5W (Ta)-55°C ~ 175°C (TJ)AutomotiveAEC-Q101Surface Mount, Wettable FlankPowerDI3333-8 (SWP) Type UX8-PowerVDFN
8-PowerVDFN_BOTTOM
DMTH8028LFVWQ-7
MOSFET BVDSS: 61V~100V POWERDI33
Diodes Incorporated
2,000
In Stock
2,000
Factory
1 : $0.70000
Cut Tape (CT)
2,000 : $0.26583
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V27A (Tc)4.5V, 10V25mOhm @ 5A, 10V2.5V @ 250µA10.4 nC @ 10 V±20V631 pF @ 40 V-1.5W (Ta)-55°C ~ 175°C (TJ)AutomotiveAEC-Q101Surface Mount, Wettable FlankPowerDI3333-8 (SWP) Type UX8-PowerVDFN
2,956
In Stock
1 : $0.86000
Cut Tape (CT)
3,000 : $0.35707
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V27A (Tc)4.5V, 10V6mOhm @ 13.5A, 10V2.3V @ 200µA17 nC @ 10 V±20V1400 pF @ 15 V-700mW (Ta), 32W (Tc)150°C (TJ)--Surface Mount8-TSON Advance (3.1x3.1)8-PowerVDFN
PowerPAK-SO-8-Single
SQJ416EP-T1_BE3
N-CHANNEL 100-V (D-S) 175C MOSFE
Vishay Siliconix
9,000
In Stock
1 : $0.94000
Cut Tape (CT)
3,000 : $0.39030
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V27A (Tc)10V30mOhm @ 10A, 10V3.5V @ 250µA20 nC @ 10 V±20V800 pF @ 25 V-45W (Tc)-55°C ~ 175°C (TJ)--Surface MountPowerPAK® SO-8PowerPAK® SO-8
D2PAK SOT404
PHB29N08T,118
MOSFET N-CH 75V 27A D2PAK
Nexperia USA Inc.
4,700
In Stock
1 : $1.21000
Cut Tape (CT)
800 : $0.65080
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)75 V27A (Tc)11V50mOhm @ 14A, 11V5V @ 2mA19 nC @ 10 V±30V810 pF @ 25 V-88W (Tc)-55°C ~ 175°C (TJ)--Surface MountD2PAKTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6014YNX3C16
R6027YNX3C16
NCH 600V 27A, TO-220AB, POWER MO
Rohm Semiconductor
1,000
In Stock
1 : $5.38000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V27A (Tc)10V, 12V135mOhm @ 7A, 12V6V @ 2mA40 nC @ 10 V±30V1670 pF @ 100 V-245W (Tc)150°C (TJ)--Through HoleTO-220ABTO-220-3
R6022YNZ4C13
R6027YNZ4C13
NCH 600V 27A, TO-247G, POWER MOS
Rohm Semiconductor
600
In Stock
1 : $6.08000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V27A (Tc)10V, 12V135mOhm @ 7A, 12V6V @ 2mA40 nC @ 10 V±30V1670 pF @ 100 V-245W (Tc)150°C (TJ)--Through HoleTO-247GTO-247-3
SSFD20N24
GSFD0625
MOSFET, N-CH, SINGLE, 27.00A, 60
Good-Ark Semiconductor
11,488
In Stock
1 : $0.49000
Cut Tape (CT)
2,500 : $0.17220
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V27A (Tc)4.5V, 10V34mOhm @ 15A, 10V2.5V @ 250µA32 nC @ 10 V±20V2200 pF @ 30 V-40W (Tc)-50°C ~ 150°C (TJ)--Surface MountTO-252 (DPAK)TO-252-3, DPAK (2 Leads + Tab), SC-63
8PowerVDFN
STL50NH3LL
MOSFET N-CH 30V 27A POWERFLAT
STMicroelectronics
1,457
In Stock
1 : $1.50000
Cut Tape (CT)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V27A (Tc)4.5V, 10V13mOhm @ 6.5A, 10V1V @ 250µA12 nC @ 4.5 V±16V965 pF @ 25 V-60W (Tc)-55°C ~ 150°C (TJ)--Surface MountPowerFlat™ (5x6)8-PowerVDFN
Showing
of 105

27A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.