TO-247-4 Single FETs, MOSFETs

Results: 14
Drain to Source Voltage (Vdss)
650 V900 V1000 V1200 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)30A (Tc)32A (Tc)35A (Tc)37A (Tc)49A (Tc)63A (Tc)66A (Tc)73A (Tc)97A (Tc)100A (Tc)115A (Tc)120A (Tc)
Rds On (Max) @ Id, Vgs
21mOhm @ 55.8A, 15V22.3mOhm @ 75A, 15V28.8mOhm @ 50A, 15V34mOhm @ 33.5A, 15V39mOhm @ 35A, 15V43mOhm @ 40A, 15V53.5mOhm @ 33.3A, 15V60mOhm @ 17.6A, 15V78mOhm @ 20A, 15V79mOhm @ 13.2A, 15V90mOhm @ 20A, 15V155mOhm @ 15A, 15V157mOhm @ 6.76A, 15V
Vgs(th) (Max) @ Id
3.5V @ 11mA3.5V @ 3mA3.5V @ 5mA3.6V @ 1.86mA3.6V @ 11.5mA3.6V @ 15.5mA3.6V @ 17.7mA3.6V @ 23mA3.6V @ 4.84mA3.6V @ 5mA3.6V @ 9.22mA3.6V @ 9.2mA4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
21.5 nC @ 15 V28 nC @ 15 V35 nC @ 15 V46 nC @ 15 V51 nC @ 15 V53 nC @ 15 V63 nC @ 15 V74 nC @ 15 V99 nC @ 15 V112 nC @ 15 V118 nC @ 15 V162 nC @ 15 V188 nC @ 15 V211 nC @ 15 V
Vgs (Max)
+15V, -4V±15V+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 600 V640 pF @ 400 V660 pF @ 600 V1020 pF @ 600 V1350 pF @ 1000 V1390 pF @ 1000 V1503 pF @ 600 V1621 pF @ 600 V2900 pF @ 1000 V2980 pF @ 600 V3357 pF @ 1000 V4818 pF @ 1000 V5011 pF @ 400 V6085 pF @ 1000 V
Power Dissipation (Max)
83W (Tc)98W (Tc)113.5W (Tc)113.6W (Tc)136W (Tc)150W (Tc)176W (Tc)240W (Tc)283W (Tc)326W (Tc)416W (Tc)469W (Tc)556W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
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FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
C3M0065100K
C3M0065100K
SICFET N-CH 1000V 35A TO247-4L
Wolfspeed, Inc.
519
In Stock
1 : $21.33000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1000 V35A (Tc)15V78mOhm @ 20A, 15V3.5V @ 5mA35 nC @ 15 V+19V, -8V660 pF @ 600 V-113.5W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0040120K
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
0
In Stock
Check Lead Time
1 : $27.02000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V66A (Tc)15V53.5mOhm @ 33.3A, 15V3.6V @ 9.2mA99 nC @ 15 V+15V, -4V2900 pF @ 1000 V-326W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0021120K
SICFET N-CH 1200V 100A TO247-4L
Wolfspeed, Inc.
1,356
In Stock
1 : $41.02000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V100A (Tc)15V28.8mOhm @ 50A, 15V3.6V @ 17.7mA162 nC @ 15 V+15V, -4V4818 pF @ 1000 V-469W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0030090K
SICFET N-CH 900V 73A TO247-4
Wolfspeed, Inc.
0
In Stock
Check Lead Time
1 : $47.73000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)900 V73A (Tc)15V39mOhm @ 35A, 15V3.5V @ 11mA74 nC @ 15 V+15V, -4V1503 pF @ 600 V-240W (Tc)-40°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0015065K
SICFET N-CH 650V 120A TO247-4L
Wolfspeed, Inc.
949
In Stock
1 : $50.91000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V120A (Tc)15V21mOhm @ 55.8A, 15V3.6V @ 15.5mA188 nC @ 15 V+15V, -4V5011 pF @ 400 V-416W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0016120K
SICFET N-CH 1.2KV 115A TO247-4
Wolfspeed, Inc.
324
In Stock
1 : $91.16000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V115A (Tc)15V22.3mOhm @ 75A, 15V3.6V @ 23mA211 nC @ 15 V+15V, -4V6085 pF @ 1000 V-556W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0120065K
650V 120M SIC MOSFET
Wolfspeed, Inc.
607
In Stock
1 : $9.42000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V22A (Tc)15V157mOhm @ 6.76A, 15V3.6V @ 1.86mA28 nC @ 15 V+19V, -8V640 pF @ 400 V-98W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0060065K
SICFET N-CH 650V 37A TO247-4L
Wolfspeed, Inc.
106
In Stock
1 : $16.57000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V37A (Tc)15V79mOhm @ 13.2A, 15V3.6V @ 5mA46 nC @ 15 V+15V, -4V1020 pF @ 600 V-150W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0120100K
SICFET N-CH 1000V 22A TO247-4L
Wolfspeed, Inc.
1,729
In Stock
1 : $16.69000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1000 V22A (Tc)15V155mOhm @ 15A, 15V3.5V @ 3mA21.5 nC @ 15 V±15V350 pF @ 600 V-83W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0045065K
GEN 3 650V 49A SIC MOSFET
Wolfspeed, Inc.
11
In Stock
1 : $19.68000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V49A (Tc)15V60mOhm @ 17.6A, 15V3.6V @ 4.84mA63 nC @ 15 V+19V, -8V1621 pF @ 600 V-176W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0075120K
SICFET N-CH 1200V 30A TO247-4L
Wolfspeed, Inc.
1,223
In Stock
1 : $20.97000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V30A (Tc)15V90mOhm @ 20A, 15V4V @ 5mA51 nC @ 15 V+19V, -8V1350 pF @ 1000 V-113.6W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0075120K-A
75M 1200V 175C SIC FET
Wolfspeed, Inc.
383
In Stock
1 : $19.68000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V32A (Tc)15V90mOhm @ 20A, 15V3.6V @ 5mA53 nC @ 15 V+15V, -4V1390 pF @ 1000 V-136W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0025065K
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
0
In Stock
Check Lead Time
1 : $30.95000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V97A (Tc)15V34mOhm @ 33.5A, 15V3.6V @ 9.22mA112 nC @ 15 V+19V, -8V2980 pF @ 600 V-326W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0065100K
C3M0032120K
SICFET N-CH 1200V 63A TO247-4L
Wolfspeed, Inc.
4
In Stock
1 : $36.20000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V63A (Tc)15V43mOhm @ 40A, 15V3.6V @ 11.5mA118 nC @ 15 V+15V, -4V3357 pF @ 1000 V-283W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
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TO-247-4 Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.