TO-247-3 Single FETs, MOSFETs

Results: 16
Drain to Source Voltage (Vdss)
650 V900 V1200 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)11.5A (Tc)17A (Tc)22A (Tc)23A (Tc)30A (Tc)32A (Tc)36A (Tc)37A (Tc)49A (Tc)63A (Tc)66A (Tc)97A (Tc)100A (Tc)
Rds On (Max) @ Id, Vgs
21mOhm @ 55.8A, 15V22.3mOhm @ 75A, 15V28.8mOhm @ 50A, 15V34mOhm @ 33.5A, 15V43mOhm @ 40A, 15V53.5mOhm @ 33.3A, 15V60mOhm @ 17.6A, 15V78mOhm @ 20A, 15V79mOhm @ 13.2A, 15V90mOhm @ 20A, 15V155mOhm @ 15A, 15V157mOhm @ 6.76A, 15V208mOhm @ 8.5A, 15V360mOhm @ 7.5A, 15V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA3.5V @ 3mA3.5V @ 5mA3.6V @ 1.86mA3.6V @ 11.5mA3.6V @ 15.5mA3.6V @ 17.7mA3.6V @ 1mA3.6V @ 2.33mA3.6V @ 23mA3.6V @ 4.84mA3.6V @ 5mA3.6V @ 9.22mA3.6V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs
9.5 nC @ 15 V17.3 nC @ 15 V19 nC @ 15 V28 nC @ 15 V30.4 nC @ 15 V38 nC @ 15 V46 nC @ 15 V54 nC @ 15 V63 nC @ 15 V101 nC @ 15 V108 nC @ 15 V114 nC @ 15 V160 nC @ 15 V188 nC @ 15 V
Vgs (Max)
+15V, -4V+18V, -8V+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 600 V345 pF @ 1000 V414 pF @ 600 V632 pF @ 1000 V640 pF @ 400 V660 pF @ 600 V1020 pF @ 600 V1350 pF @ 1000 V1390 pF @ 1000 V1621 pF @ 600 V2900 pF @ 1000 V2980 pF @ 600 V3357 pF @ 1000 V4818 pF @ 1000 V
Power Dissipation (Max)
50W (Tc)54W (Tc)97W (Tc)98W (Tc)113.6W (Tc)125W (Tc)136W (Tc)150W (Tc)176W (Tc)283W (Tc)326W (Tc)416W (Tc)469W (Tc)556W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)
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FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
C2D10120D
C3M0160120D
SICFET N-CH 1200V 17A TO247-3
Wolfspeed, Inc.
2,179
In Stock
1 : $11.11000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V17A (Tc)15V208mOhm @ 8.5A, 15V3.6V @ 2.33mA38 nC @ 15 V+15V, -4V632 pF @ 1000 V-97W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0120090D
SICFET N-CH 900V 23A TO247-3
Wolfspeed, Inc.
247
In Stock
1 : $12.26000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)900 V23A (Tc)15V155mOhm @ 15A, 15V3.5V @ 3mA17.3 nC @ 15 V+18V, -8V414 pF @ 600 V-97W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0065090D
SICFET N-CH 900V 36A TO247-3
Wolfspeed, Inc.
2,044
In Stock
1 : $19.48000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)900 V36A (Tc)15V78mOhm @ 20A, 15V3.5V @ 5mA30.4 nC @ 15 V+18V, -8V660 pF @ 600 V-125W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0075120D
SICFET N-CH 1200V 30A TO247-3
Wolfspeed, Inc.
1,004
In Stock
1 : $19.68000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V30A (Tc)15V90mOhm @ 20A, 15V4V @ 5mA54 nC @ 15 V+19V, -8V1350 pF @ 1000 V-113.6W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0040120D
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
316
In Stock
1 : $27.02000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V66A (Tc)15V53.5mOhm @ 33.3A, 15V3.6V @ 9.5mA101 nC @ 15 V+15V, -4V2900 pF @ 1000 V-326W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0021120D
SICFET N-CH 1200V 100A TO247-3
Wolfspeed, Inc.
263
In Stock
1 : $41.02000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V100A (Tc)15V28.8mOhm @ 50A, 15V3.6V @ 17.7mA160 nC @ 15 V+15V, -4V4818 pF @ 1000 V-469W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0015065D
SICFET N-CH 650V 120A TO247-3
Wolfspeed, Inc.
937
In Stock
1 : $50.91000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V120A (Tc)15V21mOhm @ 55.8A, 15V3.6V @ 15.5mA188 nC @ 15 V+15V, -4V5011 pF @ 400 V-416W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0016120D
SICFET N-CH 1200V 115A TO247-3
Wolfspeed, Inc.
1,564
In Stock
1 : $91.16000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V115A (Tc)15V22.3mOhm @ 75A, 15V3.6V @ 23mA207 nC @ 15 V+15V, -4V6085 pF @ 1000 V-556W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
3,387
In Stock
1 : $7.40000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V7.6A (Tc)15V455mOhm @ 3.6A, 15V3.6V @ 1mA19 nC @ 15 V+15V, -4V345 pF @ 1000 V-50W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0280090D
SICFET N-CH 900V 11.5A TO247-3
Wolfspeed, Inc.
4,750
In Stock
1 : $7.50000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)900 V11.5A (Tc)15V360mOhm @ 7.5A, 15V3.5V @ 1.2mA9.5 nC @ 15 V+18V, -8V150 pF @ 600 V-54W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0060065D
SICFET N-CH 650V 37A TO247-3
Wolfspeed, Inc.
712
In Stock
1 : $16.57000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V37A (Tc)15V79mOhm @ 13.2A, 15V3.6V @ 5mA46 nC @ 15 V+15V, -4V1020 pF @ 600 V-150W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0045065D
GEN 3 650V 45 M SIC MOSFET
Wolfspeed, Inc.
35
In Stock
1 : $19.68000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V49A (Tc)15V60mOhm @ 17.6A, 15V3.6V @ 4.84mA63 nC @ 15 V+19V, -8V1621 pF @ 600 V-176W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0032120D
SICFET N-CH 1200V 63A TO247-3
Wolfspeed, Inc.
263
In Stock
1 : $36.20000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V63A (Tc)15V43mOhm @ 40A, 15V3.6V @ 11.5mA114 nC @ 15 V+15V, -4V3357 pF @ 1000 V-283W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0120065D
650V 120M SIC MOSFET
Wolfspeed, Inc.
532
In Stock
1 : $9.42000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V22A (Tc)15V157mOhm @ 6.76A, 15V3.6V @ 1.86mA28 nC @ 15 V+19V, -8V640 pF @ 400 V-98W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0025065D
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
774
In Stock
1 : $31.08000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V97A (Tc)15V34mOhm @ 33.5A, 15V3.6V @ 9.22mA108 nC @ 15 V+19V, -8V2980 pF @ 600 V-326W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C2D10120D
C3M0075120D-A
75M 1200V 175C SIC FET
Wolfspeed, Inc.
411
In Stock
1 : $19.68000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V32A (Tc)15V90mOhm @ 20A, 15V3.6V @ 5mA54 nC @ 15 V+15V, -4V1390 pF @ 1000 V-136W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
Showing
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TO-247-3 Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.