Rohm Semiconductor Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
R6002JND4TL1 600V 1A SOT-223-3, PRESTOMOS WIT Rohm Semiconductor	3,956 In Stock	1 : $1.01000 Cut Tape (CT) 4,000 : $0.33124 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1A (Tc)	15V	3.25Ohm @ 1A, 15V	7V @ 100µA	7 nC @ 15 V	±30V	130 pF @ 100 V	-	6.6W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-3
R6003KND4TL1 600V 1.3A SOT-223-3, HIGH-SPEED Rohm Semiconductor	3,658 In Stock	1 : $1.04000 Cut Tape (CT) 4,000 : $0.32436 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1.3A (Tc)	10V	1.5Ohm @ 1A, 10V	5.5V @ 1mA	8 nC @ 10 V	±20V	185 pF @ 25 V	-	7.8W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-3
R6003JND4TL1 600V 1.3A SOT-223-3, PRESTOMOS W Rohm Semiconductor	3,980 In Stock	1 : $1.13000 Cut Tape (CT) 4,000 : $0.37142 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	1.3A (Tc)	15V	2.15Ohm @ 1.5A, 15V	7V @ 300µA	8 nC @ 15 V	±30V	180 pF @ 100 V	-	7.8W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-3
R6004END4TL1 600V 2.4A SOT-223-3, LOW-NOISE P Rohm Semiconductor	2,869 In Stock	1 : $1.25000 Cut Tape (CT) 4,000 : $0.42532 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.4A (Tc)	10V	980mOhm @ 1.5A, 10V	4V @ 1mA	15 nC @ 10 V	±20V	250 pF @ 25 V	-	9.1W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-3
R6006KND4TL1 600V 2.8A SOT-223-3, HIGH-SPEED Rohm Semiconductor	3,981 In Stock	1 : $1.40000 Cut Tape (CT) 4,000 : $0.41026 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.8A (Tc)	10V	870mOhm @ 2A, 10V	5.5V @ 1mA	12 nC @ 10 V	±20V	350 pF @ 25 V	-	12.3W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-223-3	TO-261-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.