Single FETs, MOSFETs

Results: 9
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
750 V1200 V1700 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)10A (Tc)18A (Tc)19A (Tc)38A (Tc)44A (Tc)66A (Tc)85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V15V, 18V
Rds On (Max) @ Id, Vgs
34mOhm @ 45A, 18V45mOhm @ 35A, 18V85mOhm @ 20A, 18V180mOhm @ 10A, 18V224mOhm @ 10A, 15V395mOhm @ 4A, 18V585mOhm @ 4A, 15V-
Vgs(th) (Max) @ Id
2.7V @ 10mA2.7V @ 18mA2.7V @ 24mA2.7V @ 2mA2.7V @ 5mA-
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 15 V18 nC @ 15 V23 nC @ 15 V29 nC @ 15 V47 nC @ 15 V88 nC @ 15 V118 nC @ 15 V
Vgs (Max)
+15V, -5V±15V+22V, -10V-
Input Capacitance (Ciss) (Max) @ Vds
331 pF @ 800 V454 pF @ 1000 V724 pF @ 800 V854 pF @ 1000 V1545 pF @ 800 V2897 pF @ 800 V3863 pF @ 800 V
Power Dissipation (Max)
64W (Tc)71W (Tc)110W (Tc)145W (Tc)182W (Tc)187W (Tc)196W (Tc)330W (Tc)408W (Tc)
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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
GA20JT12-263
G3R450MT17J-TR
1700V 450M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
1,504
In Stock
1 : $8.04000
Cut Tape (CT)
800 : $6.08003
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
8A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
+15V, -5V
454 pF @ 1000 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
5,635
In Stock
1 : $11.03000
Cut Tape (CT)
800 : $8.34001
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
38A (Tc)
15V, 18V
85mOhm @ 20A, 18V
2.7V @ 10mA
47 nC @ 15 V
+22V, -10V
1545 pF @ 800 V
-
196W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R160MT17J-TR
1700V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
1,442
In Stock
1 : $12.98000
Cut Tape (CT)
800 : $9.94005
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
18A (Tc)
15V
224mOhm @ 10A, 15V
2.7V @ 5mA
29 nC @ 15 V
+15V, -5V
854 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R160MT12J-TR
1200V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
4,698
In Stock
1 : $7.26000
Cut Tape (CT)
800 : $5.45001
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
19A (Tc)
15V, 18V
180mOhm @ 10A, 18V
2.7V @ 5mA
23 nC @ 15 V
+22V, -10V
724 pF @ 800 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R30MT12J-TR
1200V 30M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
1,078
In Stock
1 : $22.83000
Cut Tape (CT)
800 : $17.64003
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
85A (Tc)
15V, 18V
34mOhm @ 45A, 18V
2.7V @ 24mA
118 nC @ 15 V
+22V, -10V
3863 pF @ 800 V
-
408W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R350MT12J-TR
1200V 350M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
699
In Stock
1 : $5.51000
Cut Tape (CT)
800 : $4.05003
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
10A (Tc)
15V, 18V
395mOhm @ 4A, 18V
2.7V @ 2mA
10 nC @ 15 V
+22V, -10V
331 pF @ 800 V
-
64W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R60MT07J-TR
650V 60M TO-263-7 G3R SIC MOSFET
GeneSiC Semiconductor
800
In Stock
1 : $10.70000
Cut Tape (CT)
800 : $8.26004
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
750 V
44A (Tc)
15V
-
-
-
-
-
-
182W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R40MT12J-TR
1200V 40M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
690
In Stock
1 : $17.98000
Cut Tape (CT)
800 : $13.64008
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
66A (Tc)
15V, 18V
45mOhm @ 35A, 18V
2.7V @ 18mA
88 nC @ 15 V
+22V, -10V
2897 pF @ 800 V
-
330W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA20JT12-263
G3R160MT17J
SIC MOSFET N-CH 18A TO263-7
GeneSiC Semiconductor
0
In Stock
Check Lead Time
1,000 : $9.65005
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
18A (Tc)
15V
224mOhm @ 10A, 15V
2.7V @ 5mA
29 nC @ 15 V
±15V
854 pF @ 1000 V
-
187W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.