Single FETs, MOSFETs

Results: 6
Drain to Source Voltage (Vdss)
40 V60 V200 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)4A (Tc)8A (Tc)18A (Tc)30A (Tc)
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 5V24mOhm @ 8A, 5V28mOhm @ 18A, 5V130mOhm @ 4A, 5V580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id
2.5V @ 140µA2.5V @ 2mA2.5V @ 3mA2.5V @ 9mA2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
2.8 nC @ 5 V3 nC @ 5 V7 nC @ 5 V11.4 nC @ 5 V
Vgs (Max)
+6V, -4V+7V, -4V-
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 30 V150 pF @ 100 V312 pF @ 20 V900 pF @ 100 V1300 pF @ 20 V
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC7014UBC (primary)
EPC7014UBC
GAN FET HEMT 60V 1A COTS 4UB
EPC Space, LLC
82
In Stock
1 : $192.34000
Bulk
Bulk
Active
N-Channel
GaNFET (Gallium Nitride)
60 V
1A (Tc)
5V
580mOhm @ 1A, 5V
2.5V @ 140µA
-
+7V, -4V
22 pF @ 30 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
FBG20N18BSH
FBG20N18BSH
GAN FET HEMT 200V 18A 4FSMD-B
EPC Space, LLC
51
In Stock
1 : $392.75000
Bulk
Bulk
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
18A (Tc)
5V
28mOhm @ 18A, 5V
2.5V @ 3mA
7 nC @ 5 V
+6V, -4V
900 pF @ 100 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
GAN FET HEMT 60V 1A 4UB
EPC7014UBSH
GAN FET HEMT 60V 1A 4UB
EPC Space, LLC
19
In Stock
1 : $255.76000
Bulk
Bulk
Active
N-Channel
GaNFET (Gallium Nitride)
60 V
1A (Tc)
5V
580mOhm @ 1A, 5V
2.5V @ 140µA
-
-
22 pF @ 30 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
GAN FET HEMT 200V 4A 4FSMD-A
FBG20N04ASH
GAN FET HEMT 200V 4A 4FSMD-A
EPC Space, LLC
25
In Stock
1 : $392.75000
Bulk
Bulk
Active
N-Channel
GaNFET (Gallium Nitride)
200 V
4A (Tc)
5V
130mOhm @ 4A, 5V
2.8V @ 1mA
3 nC @ 5 V
+6V, -4V
150 pF @ 100 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
FBG04N30BSH
FBG04N30BSH
GAN FET HEMT 40V 30A 4FSMD-B
EPC Space, LLC
20
In Stock
1 : $392.75000
Bulk
Bulk
Active
N-Channel
GaNFET (Gallium Nitride)
40 V
30A (Tc)
5V
9mOhm @ 30A, 5V
2.5V @ 9mA
11.4 nC @ 5 V
+6V, -4V
1300 pF @ 20 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
GAN FET HEMT 40V 8A 4FSMD-A
FBG04N08ASH
GAN FET HEMT 40V 8A 4FSMD-A
EPC Space, LLC
0
In Stock
Check Lead Time
1 : $392.75000
Bulk
Bulk
Active
N-Channel
GaNFET (Gallium Nitride)
40 V
8A (Tc)
5V
24mOhm @ 8A, 5V
2.5V @ 2mA
2.8 nC @ 5 V
+6V, -4V
312 pF @ 20 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD
4-SMD, No Lead
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.