Single FETs, MOSFETs

Results: 2
Product Status
ActiveObsolete
Power Dissipation (Max)
30W (Tc)75W (Tc)
Supplier Device Package
TO-220TO-220FP
Package / Case
TO-220-3TO-220-3 Full Pack
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Media
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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
IRF630
MOSFET N-CH 200V 9A TO220AB
STMicroelectronics
13,219
In Stock
1 : $1.53000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
9A (Tc)
10V
400mOhm @ 4.5A, 10V
4V @ 250µA
45 nC @ 10 V
±20V
700 pF @ 25 V
-
75W (Tc)
-65°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220FP
IRF630FP
MOSFET N-CH 200V 9A TO220FP
STMicroelectronics
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
200 V
9A (Tc)
10V
400mOhm @ 4.5A, 10V
4V @ 250µA
45 nC @ 10 V
±20V
700 pF @ 25 V
-
30W (Tc)
-65°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.