Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
IRF630
MOSFET N-CH 200V 9A TO220AB
STMicroelectronics
20,526
In Stock
1 : $1.59000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)200 V9A (Tc)10V400mOhm @ 4.5A, 10V4V @ 250µA45 nC @ 10 V±20V700 pF @ 25 V-75W (Tc)-65°C ~ 150°C (TJ)Through HoleTO-220TO-220-3
TO-220FP
IRF630FP
MOSFET N-CH 200V 9A TO220FP
STMicroelectronics
0
In Stock
Obsolete
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)200 V9A (Tc)10V400mOhm @ 4.5A, 10V4V @ 250µA45 nC @ 10 V±20V700 pF @ 25 V-30W (Tc)-65°C ~ 150°C (TJ)Through HoleTO-220FPTO-220-3 Full Pack
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.