Single FETs, MOSFETs

Results: 3
Current - Continuous Drain (Id) @ 25°C
3A (Tc)36A (Tc)
Rds On (Max) @ Id, Vgs
130mOhm @ 18A, 10V3.2Ohm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
175 pF @ 100 V3233 pF @ 100 V
Power Dissipation (Max)
69W (Tc)446W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-247ACTO-252AA
Package / Case
TO-247-3TO-252-3, DPAK (2 Leads + Tab), SC-63
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FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SIHS36N50D-GE3
SIHS36N50D-GE3
D SERIES POWER MOSFET SUPER-247,
Vishay Siliconix
530
In Stock
1 : $6.35000
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N-Channel
MOSFET (Metal Oxide)
500 V
36A (Tc)
10V
130mOhm @ 18A, 10V
5V @ 250µA
125 nC @ 10 V
±30V
3233 pF @ 100 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-252
SIHD3N50D-BE3
MOSFET N-CH 500V 3A DPAK
Vishay Siliconix
0
In Stock
Check Lead Time
1 : $0.89000
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N-Channel
MOSFET (Metal Oxide)
500 V
3A (Tc)
10V
3.2Ohm @ 1.5A, 10V
5V @ 250µA
12 nC @ 10 V
±30V
175 pF @ 100 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
SIHD3N50DT4-GE3
MOSFET N-CH 500V 3A DPAK
Vishay Siliconix
0
In Stock
Check Lead Time
3,000 : $0.33678
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N-Channel
MOSFET (Metal Oxide)
500 V
3A (Tc)
10V
3.2Ohm @ 1.5A, 10V
5V @ 250µA
12 nC @ 10 V
±30V
175 pF @ 100 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.