Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

GT110N06D3 N60V, 35A,RD<11M@10V,VTH1.0V~2.4 Goford Semiconductor	9,903 In Stock 15,000 Marketplace	1 : $0.75000 Cut Tape (CT) 5,000 : $0.26932 Tape & Reel (TR) 5,000 : $0.20100 Tape & Reel (TR)	GT	Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	35A (Tc)	4.5V, 10V	11mOhm @ 14A, 10V	2.4V @ 250µA	24 nC @ 10 V	±20V	1059 pF @ 30 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3.15x3.05)	8-PowerVDFN
GT110N06D5 N60V, 45A,RD<11M@10V,VTH1.0V~2.4 Goford Semiconductor	9,996 In Stock	1 : $0.91000 Cut Tape (CT) 5,000 : $0.32602 Tape & Reel (TR)	GT	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	45A (Tc)	4.5V, 10V	11mOhm @ 14A, 10V	2.4V @ 250µA	31 nC @ 10 V	±20V	1202 pF @ 30 V	-	69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (4.9x5.75)	8-PowerTDFN
GT1003A N100V, 3A,RD<140M@10V,VTH1.0V~3. Goford Semiconductor	2,950 In Stock 102,000 Marketplace	1 : $0.43000 Cut Tape (CT) 3,000 : $0.09450 Tape & Reel (TR) 3,000 : $0.05500 Tape & Reel (TR)	GT	Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3A (Ta)	10V	140mOhm @ 3A, 10V	3V @ 250µA	4.3 nC @ 10 V	±20V	206 pF @ 50 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
GT095N10K N100V, RD(MAX)<10.5M@10V,RD(MAX) Goford Semiconductor	3,955 In Stock 20,000 Marketplace	1 : $1.14000 Cut Tape (CT) 2,500 : $0.48510 Tape & Reel (TR) 2,500 : $0.30300 Tape & Reel (TR)	GT	Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	55A (Tc)	4.5V, 10V	10.5mOhm @ 35A, 10V	2.5V @ 250µA	54 nC @ 10 V	±20V	1667 pF @ 50 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
GT10N10 N100V, 7A,RD<140M@10V,VTH1.5V~2. Goford Semiconductor	1,985 In Stock 100,000 Marketplace	1 : $0.51000 Cut Tape (CT) 2,500 : $0.17902 Tape & Reel (TR) 2,500 : $0.12400 Tape & Reel (TR)	GT	Tape & Reel (TR) Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7A (Tc)	4.5V, 10V	140mOhm @ 3.5A, 10V	2.5V @ 250µA	4.3 nC @ 10 V	±20V	206 pF @ 50 V	-	17W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
GT080N10T N100V, 70A,RD<8M@10V,VTH1.0V~3.0 Goford Semiconductor	62 In Stock	1 : $1.58000 Tube	GT	Tube Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	70A (Tc)	4.5V, 10V	8mOhm @ 50A, 10V	3V @ 250µA	35 nC @ 10 V	±20V	2257 pF @ 50 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.