Showing
of 15
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPW65R050CFD7AXKSA1
IPW65R035CFD7AXKSA1
MOSFET N-CH 650V 63A TO247-3-41
Infineon Technologies
1,300
In Stock
1 : $18.76000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V63A (Tc)10V35mOhm @ 35.8A, 10V4.5V @ 1.79mA145 nC @ 10 V±20V7149 pF @ 400 V-305W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
PG-TO263-7-3-10
IPBE65R230CFD7AATMA1
MOSFET N-CH 650V 11A TO263-7
Infineon Technologies
2,451
In Stock
1 : $5.17000
Cut Tape (CT)
1,000 : $2.67220
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)650 V11A (Tc)10V230mOhm @ 5.2A, 10V4.5V @ 260µA23 nC @ 10 V±20V1044 pF @ 400 V-63W (Tc)-40°C ~ 150°C (TJ)Surface MountPG-TO263-7-3-10TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IPW65R050CFD7AXKSA1
IPW65R099CFD7AXKSA1
MOSFET N-CH 650V 24A TO247-3-41
Infineon Technologies
240
In Stock
1 : $8.18000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V24A (Tc)10V99mOhm @ 12.5A, 10V4.5V @ 630µA53 nC @ 10 V±20V2513 pF @ 400 V-127W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
IPW65R050CFD7AXKSA1
IPW65R075CFD7AXKSA1
MOSFET N-CH 650V 32A TO247-3-41
Infineon Technologies
240
In Stock
1 : $10.38000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V32A (Tc)10V75mOhm @ 16.4A, 10V4.5V @ 820µA68 nC @ 10 V±20V3288 pF @ 400 V-171W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
PG-TO263-7-3-10
IPBE65R050CFD7AATMA1
MOSFET N-CH 650V 45A TO263-7
Infineon Technologies
1,962
In Stock
1 : $13.34000
Cut Tape (CT)
1,000 : $8.44667
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)650 V45A (Tc)10V50mOhm @ 24.8A, 10V4.5V @ 1.24mA102 nC @ 10 V±20V4975 pF @ 400 V-227W (Tc)-40°C ~ 150°C (TJ)Surface MountPG-TO263-7-3-10TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IPP65R115CFD7AAKSA1
IPP65R099CFD7AAKSA1
MOSFET N-CH 650V 24A TO220-3
Infineon Technologies
42
In Stock
1 : $7.12000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V24A (Tc)10V99mOhm @ 12.5A, 10V4.5V @ 630µA53 nC @ 10 V±20V2513 pF @ 400 V-127W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
MOSFETTO247
IPWS65R050CFD7AXKSA1
MOSFET N-CH 650V 45A TO247-3-41
Infineon Technologies
81
In Stock
1 : $11.78000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V45A (Tc)10V50mOhm @ 24.8A, 10V4.5V @ 1.24mA102 nC @ 10 V±20V4975 pF @ 400 V-227W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R099CFD7AATMA1
MOSFET N-CH 650V 24A TO263-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : $7.14000
Cut Tape (CT)
1,000 : $4.04837
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)650 V24A (Tc)10V99mOhm @ 12.5A, 10V4.5V @ 630µA53 nC @ 10 V±20V2513 pF @ 400 V-127W (Tc)-40°C ~ 150°C (TJ)Surface MountPG-TO263-3TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-7-3-10
IPBE65R099CFD7AATMA1
MOSFET N-CH 650V 24A TO263-7
Infineon Technologies
0
In Stock
905
Marketplace
Check Lead Time
1 : $7.63000
Cut Tape (CT)
1,000 : $4.32911
Tape & Reel (TR)
66 : $4.59000
Bulk
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)650 V24A (Tc)10V99mOhm @ 12.5A, 10V4.5V @ 630µA53 nC @ 10 V±20V2513 pF @ 400 V-127W (Tc)-40°C ~ 150°C (TJ)Surface MountPG-TO263-7-3-10TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
PG-TO263-7-3-10
IPBE65R075CFD7AATMA1
MOSFET N-CH 650V 32A TO263-7
Infineon Technologies
0
In Stock
Check Lead Time
1 : $11.17000
Cut Tape (CT)
1,000 : $6.33864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)650 V32A (Tc)10V75mOhm @ 16.4A, 10V4.5V @ 820µA68 nC @ 10 V±20V3288 pF @ 400 V-171W (Tc)-40°C ~ 150°C (TJ)Surface MountPG-TO263-7-3-10TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
MOSFETTO247
IPW65R115CFD7AXKSA1
MOSFET N-CH 650V 21A TO247-3-41
Infineon Technologies
0
In Stock
Check Lead Time
1 : $6.41000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V21A (Tc)10V115mOhm @ 9.7A, 10V4.5V @ 490µA41 nC @ 10 V±20V1950 pF @ 400 V-114W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
MOSFETTO247
IPWS65R075CFD7AXKSA1
MOSFET N-CH 650V 32A TO247-3-41
Infineon Technologies
0
In Stock
Check Lead Time
1 : $10.39000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V32A (Tc)10V75mOhm @ 16.4A, 10V4.5V @ 820µA68 nC @ 10 V±20V3288 pF @ 400 V-171W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
IPW65R050CFD7AXKSA1
IPW65R050CFD7AXKSA1
MOSFET N-CH 650V 45A TO247-3-41
Infineon Technologies
0
In Stock
Check Lead Time
1 : $11.78000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V45A (Tc)10V50mOhm @ 24.8A, 10V4.5V @ 1.24mA102 nC @ 10 V±20V4975 pF @ 400 V-227W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
IPP65R115CFD7AAKSA1
IPP65R050CFD7AAKSA1
MOSFET N-CH 650V 45A TO220-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : $12.48000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V45A (Tc)10V50mOhm @ 24.8A, 10V4.5V @ 1.24mA102 nC @ 10 V±20V4975 pF @ 400 V-227W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO220-3TO-220-3
MOSFETTO247
IPWS65R035CFD7AXKSA1
MOSFET N-CH 650V 63A TO247-3-41
Infineon Technologies
0
In Stock
Check Lead Time
1 : $18.75000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V63A (Tc)10V35mOhm @ 35.8A, 10V4.5V @ 1.79mA145 nC @ 10 V±20V7149 pF @ 400 V-305W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO247-3-41TO-247-3
Showing
of 15

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.