N-Channel MOSFET (Metal Oxide) 18A (Tc) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
Infineon Technologies
19,096
In Stock
1 : $1.81000
Cut Tape (CT)
2,500 : $0.59720
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
180mOhm @ 5.6A, 10V
4V @ 280µA
25 nC @ 10 V
±20V
1081 pF @ 400 V
-
72W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD60R180P7ATMA1
MOSFET N-CH 600V 18A TO252-3
Infineon Technologies
4,534
In Stock
1 : $1.91000
Cut Tape (CT)
2,500 : $0.77825
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
180mOhm @ 5.6A, 10V
4V @ 280µA
25 nC @ 10 V
±20V
1081 pF @ 400 V
-
72W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO263-3
IPB60R180P7ATMA1
MOSFET N-CH 600V 18A D2PAK
Infineon Technologies
1,996
In Stock
1 : $2.53000
Cut Tape (CT)
1,000 : $0.95827
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
180mOhm @ 5.6A, 10V
4V @ 280µA
25 nC @ 10 V
±20V
1081 pF @ 400 V
-
72W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8 Power VDFN
STL24N60M2
MOSFET N-CH 600V 18A PWRFLAT HV
STMicroelectronics
36,404
In Stock
1 : $4.01000
Cut Tape (CT)
3,000 : $1.36025
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
210mOhm @ 9A, 10V
4V @ 250µA
29 nC @ 10 V
±25V
1060 pF @ 100 V
-
125W (Tc)
150°C (TJ)
-
-
Surface Mount
PowerFlat™ (8x8) HV
8-PowerVDFN
SIHH105N60EF-T1GE3
SIHH155N60EF-T1GE3
EF SERIES POWER MOSFET WITH FAST
Vishay Siliconix
6,000
In Stock
1 : $5.84000
Cut Tape (CT)
3,000 : $2.43875
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
155mOhm @ 10A, 10V
5V @ 250µA
38 nC @ 10 V
±30V
1465 pF @ 100 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 8 x 8
8-PowerTDFN
PowerPAK-10x12_view1
SIHK155N60EF-T1GE3
EF SERIES POWER MOSFET WITH FAST
Vishay Siliconix
4,000
In Stock
1 : $5.84000
Cut Tape (CT)
2,000 : $2.43750
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
52mOhm @ 10A, 10V
5V @ 250µA
38 nC @ 10 V
±20V
1465 pF @ 100 V
-
156W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK®10 x 12
8-PowerBSFN
PG-TO263-3-2
IPB60R125CFD7ATMA1
MOSFET N-CH 600V 18A TO263-3
Infineon Technologies
228
In Stock
1 : $4.54000
Cut Tape (CT)
1,000 : $1.62957
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
125mOhm @ 7.8A, 10V
4.5V @ 390µA
36 nC @ 10 V
±20V
1503 pF @ 400 V
-
92W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
STB24N60M2
MOSFET N-CH 600V 18A D2PAK
STMicroelectronics
0
In Stock
Check Lead Time
1 : $3.73000
Cut Tape (CT)
1,000 : $1.29522
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
190mOhm @ 9A, 10V
4V @ 250µA
29 nC @ 10 V
±25V
1060 pF @ 100 V
-
150W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
STB24N60DM2
MOSFET N-CH 600V 18A D2PAK
STMicroelectronics
0
In Stock
Check Lead Time
1 : $4.04000
Cut Tape (CT)
1,000 : $1.42100
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
200mOhm @ 9A, 10V
5V @ 250µA
29 nC @ 10 V
±25V
1055 pF @ 100 V
-
150W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
0
In Stock
Check Lead Time
2,500 : $0.59720
Tape & Reel (TR)
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
180mOhm @ 5.6A, 10V
4V @ 280µA
25 nC @ 10 V
±20V
1081 pF @ 400 V
-
72W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHB18N60E-GE3
MOSFET N-CH 600V 18A TO263
Vishay Siliconix
0
In Stock
Check Lead Time
1,000 : $1.51859
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
202mOhm @ 9A, 10V
4V @ 250µA
92 nC @ 10 V
±30V
1640 pF @ 100 V
-
179W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
600V, 18A, SINGLE N-CHANNEL POWE
TSM60NB190CM2
600V, 18A, SINGLE N-CHANNEL POWE
Taiwan Semiconductor Corporation
0
In Stock
Check Lead Time
2,400 : $3.96500
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
190mOhm @ 6A, 10V
4V @ 250µA
31 nC @ 10 V
±30V
1273 pF @ 100 V
-
150.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R8008ANJFRGTL
R6018ANJTL
MOSFET N-CH 600V 18A LPTS
Rohm Semiconductor
0
In Stock
Active
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
600 V
18A (Tc)
10V
270mOhm @ 9A, 10V
4.5V @ 1mA
55 nC @ 10 V
±30V
2050 pF @ 25 V
-
100W (Tc)
150°C (TJ)
-
-
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 13

N-Channel MOSFET (Metal Oxide) 18A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.