N-Channel Single FETs, MOSFETs

Results: 5
Series
HEXFET®HEXFET®, StrongIRFET™
Current - Continuous Drain (Id) @ 25°C
173A (Tc)195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V2.4mOhm @ 100A, 10V2.4mOhm @ 165A, 10V2.5mOhm @ 170A, 10V3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3.7V @ 150µA3.7V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 4.5 V210 nC @ 10 V279 nC @ 10 V300 nC @ 10 V411 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
7020 pF @ 25 V8970 pF @ 50 V10034 pF @ 25 V11210 pF @ 50 V13703 pF @ 25 V
Power Dissipation (Max)
230W (Tc)294W (Tc)375W (Tc)380W (Tc)
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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRLB3036PBF
MOSFET N-CH 60V 195A TO220AB
Infineon Technologies
15,726
In Stock
1 : $4.14000
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N-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
4.5V, 10V
2.4mOhm @ 165A, 10V
2.5V @ 250µA
140 nC @ 4.5 V
±16V
11210 pF @ 50 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB3006PBF
MOSFET N-CH 60V 195A TO220AB
Infineon Technologies
3,670
In Stock
1 : $4.14000
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N-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
10V
2.5mOhm @ 170A, 10V
4V @ 250µA
300 nC @ 10 V
±20V
8970 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB7534PBF
MOSFET N-CH 60V 195A TO220AB
Infineon Technologies
8,629
In Stock
1 : $1.72000
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N-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
6V, 10V
2.4mOhm @ 100A, 10V
3.7V @ 250µA
279 nC @ 10 V
±20V
10034 pF @ 25 V
-
294W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB7530PBF
MOSFET N-CH 60V 195A TO220AB
Infineon Technologies
9,666
In Stock
1 : $2.28000
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N-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
6V, 10V
2mOhm @ 100A, 10V
3.7V @ 250µA
411 nC @ 10 V
±20V
13703 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFB7537PBF
MOSFET N-CH 60V 173A TO220AB
Infineon Technologies
3,841
In Stock
1 : $2.13000
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N-Channel
MOSFET (Metal Oxide)
60 V
173A (Tc)
6V, 10V
3.3mOhm @ 100A, 10V
3.7V @ 150µA
210 nC @ 10 V
±20V
7020 pF @ 25 V
-
230W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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N-Channel Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.