Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	G2R120MT33J-TR 3300V 120M TO-263-7 G2R SIC MOSF GeneSiC Semiconductor	0 In Stock Check Lead Time	800 : $91.94125 Tape & Reel (TR)	Tariff may apply if shipping to the United States	LoRing™	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	33A (Tc)	20V	156mOhm @ 15A, 20V	3.5V @ 4mA	130 nC @ 20 V	+20V, -5V	3009 pF @ 1000 V	-	366W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
	G2R120MT33J SIC MOSFET N-CH TO263-7 GeneSiC Semiconductor	0 In Stock Check Lead Time	100 : $92.99010 Tube	-	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	35A	20V	156mOhm @ 20A, 20V	-	145 nC @ 20 V	+25V, -10V	3706 pF @ 1000 V	-	-	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.