Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	G2R1000MT33J-TR 3300V 1000M TO-263-7 G2R SIC MOS GeneSiC Semiconductor	928 In Stock	1 : $18.69000 Cut Tape (CT) 800 : $14.23004 Tape & Reel (TR)	-	LoRing™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	5A (Tc)	20V	1.2Ohm @ 2A, 20V	3.5V @ 2mA	21 nC @ 20 V	+20V, -5V	238 pF @ 1000 V	-	74W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
	G2R1000MT33J SIC MOSFET N-CH 4A TO263-7 GeneSiC Semiconductor	528 In Stock	1 : $18.69000 Tube	-	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	4A (Tc)	20V	1.2Ohm @ 2A, 20V	3.5V @ 2mA	21 nC @ 20 V	+20V, -5V	238 pF @ 1000 V	-	74W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.