Single FETs, MOSFETs

Results: 3
Series
-*
Current - Continuous Drain (Id) @ 25°C
12A (Ta)20A (Ta)
Rds On (Max) @ Id, Vgs
85mOhm @ 10A, 15V135mOhm @ 10A, 15V
Vgs(th) (Max) @ Id
2.4V @ 5mA3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 5 V40 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 200 V1810 pF @ 200 V
Supplier Device Package
TO-247TO-247-3
Package / Case
TO-247-3TO-247-4
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
CC-CL-75-1023
CC-CL-75-1023
SIC MOSFET 33A 1200V
CoolCAD
1,000
Marketplace
1 : $9.00000
Bulk
*
Bulk
Active----------------
CC-C2-B15-0322
CC-C2-B15-0322
SiC Power MOSFET 1200V 12A
CoolCAD
30
Marketplace
5 : $9.00000
Bulk
-
Bulk
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V12A (Ta)15V135mOhm @ 10A, 15V3.2V @ 5mA40 nC @ 15 V+15V, -5V1810 pF @ 200 VStandard100W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247TO-247-4
CC-CN-23-0123
CC-CN-23-0123
SiC MOSFET 20A 1200V TO-247-3
CoolCAD
15
Marketplace
5 : $9.00000
Bulk
-
Bulk
Active-SiCFET (Silicon Carbide)-20A (Ta)-85mOhm @ 10A, 15V2.4V @ 5mA16 nC @ 5 V-810 pF @ 200 VStandard--40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.