Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Tariff Status
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
CC-CL-75-1023
CC-CL-75-1023
SiC MOSFET 33A 1200V TO-247-3
CoolCAD
995
Marketplace
1 : $5.00000
Bulk
-
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
33A
15V, 20V
70mOhm @ 10A, 20V
2.9V @ 10mA
90 nC @ 18 V
+20V, -5V
930 pF @ 1000 V
-
135W
175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
CC-CN-23-0123
CC-CN-23-0123
SiC MOSFET 20A 1200V TO-247-3
CoolCAD
15
Marketplace
5 : $7.00000
Bulk
-
-
Bulk
Active
-
SiCFET (Silicon Carbide)
-
20A (Ta)
-
85mOhm @ 10A, 15V
2.4V @ 5mA
16 nC @ 5 V
-
810 pF @ 200 V
-
-
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
CC-C2-B15-0322
CC-C2-B15-0322
SiC Power MOSFET 1200V 12A
CoolCAD
5
Marketplace
5 : $7.00000
Bulk
-
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
12A (Ta)
15V
135mOhm @ 10A, 15V
3.2V @ 5mA
40 nC @ 15 V
+15V, -5V
1810 pF @ 200 V
-
100W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247
TO-247-4
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.