Single FETs, MOSFETs

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of 19

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFB7545PBF MOSFET N-CH 60V 95A TO220 Infineon Technologies	64,061 In Stock	1 : $1.00000 Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	95A (Tc)	6V, 10V	5.9mOhm @ 57A, 10V	3.7V @ 100µA	110 nC @ 10 V	±20V	4010 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IRLZ14PBF MOSFET N-CH 60V 10A TO220AB Vishay Siliconix	5,542 In Stock	1 : $1.11000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	10A (Tc)	4V, 5V	200mOhm @ 6A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF540NPBF MOSFET N-CH 100V 33A TO220AB Infineon Technologies	152,051 In Stock	1 : $1.49000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLZ44NPBF MOSFET N-CH 55V 47A TO220AB Infineon Technologies	20,434 In Stock	1 : $1.59000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFZ44EPBF MOSFET N-CH 60V 48A TO220AB Infineon Technologies	2,087 In Stock	1 : $1.77000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	60 V	48A (Tc)	10V	23mOhm @ 29A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1360 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF740PBF MOSFET N-CH 400V 10A TO220AB Vishay Siliconix	1,013 In Stock	1 : $2.04000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	10A (Tc)	10V	550mOhm @ 6A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1400 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9Z24NPBF MOSFET P-CH 55V 12A TO220AB Infineon Technologies	9,360 In Stock	1 : $0.87000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	12A (Tc)	10V	175mOhm @ 7.2A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	350 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF510PBF MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix	55,841 In Stock	1 : $1.12000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9Z14PBF MOSFET P-CH 60V 6.7A TO220AB Vishay Siliconix	6,037 In Stock	1 : $1.29000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	6.7A (Tc)	10V	500mOhm @ 4A, 10V	4V @ 250µA	12 nC @ 10 V	±20V	270 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP16NF06 MOSFET N-CH 60V 16A TO220AB STMicroelectronics	1,166 In Stock	1 : $1.35000 Tube	STripFET™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	16A (Tc)	10V	100mOhm @ 8A, 10V	4V @ 250µA	13 nC @ 10 V	±20V	315 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IRLZ34PBF MOSFET N-CH 60V 30A TO220AB Vishay Siliconix	12,362 In Stock	1 : $1.94000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	30A (Tc)	4V, 5V	50mOhm @ 18A, 5V	2V @ 250µA	35 nC @ 5 V	±10V	1600 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9Z24PBF MOSFET P-CH 60V 11A TO220AB Vishay Siliconix	7,652 In Stock	1 : $1.94000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	11A (Tc)	10V	280mOhm @ 6.6A, 10V	4V @ 250µA	19 nC @ 10 V	±20V	570 pF @ 25 V	-	60W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFZ44PBF MOSFET N-CH 60V 50A TO220AB Vishay Siliconix	13,822 In Stock	1 : $2.04000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	10V	28mOhm @ 31A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1900 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP45NF06 MOSFET N-CH 60V 38A TO220AB STMicroelectronics	6,764 In Stock	1 : $1.72000 Tube	STripFET™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	38A (Tc)	10V	28mOhm @ 19A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	980 pF @ 25 V	-	80W (Tc)	175°C (TJ)	Through Hole	TO-220	TO-220-3
IRFZ14PBF-BE3 MOSFET N-CH 60V 10A TO220AB Vishay Siliconix	1,965 In Stock	1 : $1.29000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	10A (Tc)	-	200mOhm @ 6A, 10V	4V @ 250µA	11 nC @ 10 V	±20V	300 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP60NF06L MOSFET N-CH 60V 60A TO220AB STMicroelectronics	834 In Stock	1 : $2.15000 Tube	STripFET™ II	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	60A (Tc)	10V, 5V	14mOhm @ 30A, 10V	1V @ 250µA	66 nC @ 4.5 V	±15V	2000 pF @ 25 V	-	110W (Tc)	-65°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IRFI510GPBF MOSFET N-CH 100V 4.5A TO220-3 Vishay Siliconix	987 In Stock	1 : $2.19000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	4.5A (Tc)	10V	540mOhm @ 2.7A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	27W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
FDP2572 MOSFET N-CH 150V 4A/29A TO220-3 onsemi	439 In Stock	1 : $2.25000 Tube	PowerTrench®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	4A (Ta), 29A (Tc)	6V, 10V	54mOhm @ 9A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	1770 pF @ 25 V	-	135W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRF530PBF MOSFET N-CH 100V 14A TO220AB Vishay Siliconix	0 In Stock Check Lead Time	1 : $1.42000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	160mOhm @ 8.4A, 10V	4V @ 250µA	26 nC @ 10 V	±20V	670 pF @ 25 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Single FETs, MOSFETs

Single FETs, MOSFETs

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