Single FETs, MOSFETs

Results: 11
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
-HEXFET®HEXFET®, StrongIRFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V55 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
5.6A (Tc)17A (Tc)47A (Tc)62A (Tc)74A (Tc)75A (Tc)79A (Tc)85A (Tc)95A (Tc)110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
5.9mOhm @ 57A, 10V7.5mOhm @ 75A, 10V8mOhm @ 62A, 10V8.4mOhm @ 47A, 10V8.5mOhm @ 51A, 10V8.7mOhm @ 31A, 10V11mOhm @ 43A, 10V20mOhm @ 38A, 10V22mOhm @ 25A, 10V90mOhm @ 9A, 10V540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.35V @ 25µA3.7V @ 100µA4V @ 100µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V13 nC @ 4.5 V37 nC @ 10 V48 nC @ 5 V69 nC @ 10 V86 nC @ 10 V95 nC @ 10 V110 nC @ 10 V120 nC @ 10 V146 nC @ 10 V180 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V920 pF @ 25 V1077 pF @ 15 V1700 pF @ 25 V2290 pF @ 50 V2810 pF @ 25 V2840 pF @ 25 V3210 pF @ 25 V3247 pF @ 25 V3400 pF @ 25 V4010 pF @ 25 V
Power Dissipation (Max)
3.8W (Ta), 110W (Tc)43W (Tc)65W (Tc)70W (Tc)110W (Tc)125W (Tc)140W (Tc)180W (Tc)200W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
D2PAKTO-220TO-220AB
Package / Case
TO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
11Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF530NPBF
MOSFET N-CH 100V 17A TO220AB
Infineon Technologies
46,010
In Stock
1 : $0.91000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V17A (Tc)10V90mOhm @ 9A, 10V4V @ 250µA37 nC @ 10 V±20V920 pF @ 25 V-70W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRFB7545PBF
MOSFET N-CH 60V 95A TO220
Infineon Technologies
50,152
In Stock
1 : $0.96000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V95A (Tc)6V, 10V5.9mOhm @ 57A, 10V3.7V @ 100µA110 nC @ 10 V±20V4010 pF @ 25 V-125W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220TO-220-3
TO-220AB PKG
IRLZ44NPBF
MOSFET N-CH 55V 47A TO220AB
Infineon Technologies
3,636
In Stock
1 : $1.28000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)55 V47A (Tc)4V, 10V22mOhm @ 25A, 10V2V @ 250µA48 nC @ 5 V±16V1700 pF @ 25 V-3.8W (Ta), 110W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRF3205PBF
MOSFET N-CH 55V 110A TO220AB
Infineon Technologies
22,626
In Stock
1 : $1.60000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)55 V110A (Tc)10V8mOhm @ 62A, 10V4V @ 250µA146 nC @ 10 V±20V3247 pF @ 25 V-200W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRF4905PBF
MOSFET P-CH 55V 74A TO220AB
Infineon Technologies
49,877
In Stock
1 : $2.25000
Tube
Tube
ActiveP-ChannelMOSFET (Metal Oxide)55 V74A (Tc)10V20mOhm @ 38A, 10V4V @ 250µA180 nC @ 10 V±20V3400 pF @ 25 V-200W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRLB8721PBF
MOSFET N-CH 30V 62A TO220AB
Infineon Technologies
17,429
In Stock
1 : $1.05000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)30 V62A (Tc)4.5V, 10V8.7mOhm @ 31A, 10V2.35V @ 25µA13 nC @ 4.5 V±20V1077 pF @ 15 V-65W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
IRF510PBF
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
49,141
In Stock
1 : $1.08000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V5.6A (Tc)10V540mOhm @ 3.4A, 10V4V @ 250µA8.3 nC @ 10 V±20V180 pF @ 25 V-43W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRF1018EPBF
MOSFET N-CH 60V 79A TO220AB
Infineon Technologies
2,796
In Stock
1 : $1.22000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V79A (Tc)10V8.4mOhm @ 47A, 10V4V @ 100µA69 nC @ 10 V±20V2290 pF @ 50 V-110W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRF1010EZPBF
MOSFET N-CH 60V 75A TO220AB
Infineon Technologies
9,750
In Stock
1 : $1.62000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V75A (Tc)10V8.5mOhm @ 51A, 10V4V @ 100µA86 nC @ 10 V±20V2810 pF @ 25 V-140W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1010NSTRLPBF
MOSFET N-CH 55V 85A D2PAK
Infineon Technologies
2,524
In Stock
1 : $1.82000
Cut Tape (CT)
800 : $1.01624
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)55 V85A (Tc)10V11mOhm @ 43A, 10V4V @ 250µA120 nC @ 10 V±20V3210 pF @ 25 V-180W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAKTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220AB PKG
IRF1010ZPBF
MOSFET N-CH 55V 75A TO220AB
Infineon Technologies
0
In Stock
Obsolete
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)55 V75A (Tc)10V7.5mOhm @ 75A, 10V4V @ 250µA95 nC @ 10 V±20V2840 pF @ 25 V-140W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Showing
of 11

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.