Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
50 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)265mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V10V
Rds On (Max) @ Id, Vgs
2.8Ohm @ 200mA, 10V3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
1.4V @ 250µA1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
20.2 pF @ 30 V50 pF @ 25 V
Power Dissipation (Max)
225mW (Ta)310mW (Ta)
Supplier Device Package
SOT-23-3 (TO-236)TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
326,810
In Stock
1 : $0.20000
Cut Tape (CT)
3,000 : $0.05265
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-236AB
BSN20BKR
MOSFET N-CH 60V 265MA TO236AB
Nexperia USA Inc.
0
In Stock
Check Lead Time
1 : $0.18000
Cut Tape (CT)
3,000 : $0.04703
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
265mA (Ta)
10V
2.8Ohm @ 200mA, 10V
1.4V @ 250µA
0.49 nC @ 4.5 V
±20V
20.2 pF @ 30 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.