Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMG1012TQ-7 MOSFET N-CH 20V 630MA SOT523 Diodes Incorporated	988,575 In Stock	1 : $0.35000 Cut Tape (CT) 3,000 : $0.06049 Tape & Reel (TR)	Automotive, AEC-Q101	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20 V	630mA (Ta)	1.8V, 4.5V	400mOhm @ 600mA, 4.5V	1V @ 250µA	0.74 nC @ 4.5 V	±6V	60.67 pF @ 16 V	-	280mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
IRLML2246TRPBF MOSFET P-CH 20V 2.6A SOT23 Infineon Technologies	62,935 In Stock	1 : $0.43000 Cut Tape (CT) 3,000 : $0.12353 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	2.6A (Ta)	2.5V, 4.5V	135mOhm @ 2.6A, 4.5V	1.1V @ 10µA	2.9 nC @ 4.5 V	±12V	220 pF @ 16 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
DMN1045UFR4-7 MOSFET N-CH 12V 3.2A 3DFN Diodes Incorporated	17,036 In Stock	1 : $0.45000 Cut Tape (CT) 3,000 : $0.10026 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	12 V	3.2A (Ta)	1.5V, 4.5V	45mOhm @ 3.2A, 4.5V	1V @ 250µA	4.8 nC @ 4.5 V	±8V	375 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	X2-DFN1010-3	3-XFDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.