Single FETs, MOSFETs

Results: 4
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)37A (Tc)48A (Tc)61A (Tc)
Rds On (Max) @ Id, Vgs
45mOhm @ 22.5A, 10V60mOhm @ 15.9A, 10V80mOhm @ 11.8A, 10V99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1.08mA4V @ 530µA4V @ 590µA4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V51 nC @ 10 V67 nC @ 10 V90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1952 pF @ 400 V2180 pF @ 400 V2895 pF @ 400 V3891 pF @ 400 V
Power Dissipation (Max)
117W (Tc)129W (Tc)164W (Tc)201W (Tc)
Supplier Device Package
PG-TO247-4PG-TO247-4-3
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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-4
IPZA60R080P7XKSA1
MOSFET N-CH 600V 37A TO247-4
Infineon Technologies
243
In Stock
1 : $6.26000
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MOSFET (Metal Oxide)
600 V
37A (Tc)
10V
80mOhm @ 11.8A, 10V
4V @ 590µA
51 nC @ 10 V
±20V
2180 pF @ 400 V
-
129W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4
TO-247-4
TO-247-4
IPZA60R099P7XKSA1
MOSFET N-CH 600V 31A TO247-4
Infineon Technologies
240
In Stock
1 : $6.04000
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N-Channel
MOSFET (Metal Oxide)
600 V
31A (Tc)
10V
99mOhm @ 10.5A, 10V
4V @ 530µA
45 nC @ 10 V
±20V
1952 pF @ 400 V
-
117W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4
TO-247-4
MOSFETTO247
IPZA60R045P7XKSA1
MOSFET N-CH 650V 61A TO247-4-3
Infineon Technologies
222
In Stock
1 : $9.34000
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N-Channel
MOSFET (Metal Oxide)
650 V
61A (Tc)
10V
45mOhm @ 22.5A, 10V
4V @ 1.08mA
90 nC @ 10 V
±20V
3891 pF @ 400 V
-
201W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4-3
TO-247-4
TO-247-4
IPZA60R060P7XKSA1
MOSFET N-CH 600V 48A TO247-4
Infineon Technologies
0
In Stock
Check Lead Time
1 : $7.38000
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N-Channel
MOSFET (Metal Oxide)
600 V
48A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
67 nC @ 10 V
±20V
2895 pF @ 400 V
-
164W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4
TO-247-4
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.