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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRFB4410ZPBF MOSFET N-CH 100V 97A TO220AB Infineon Technologies	124 In Stock	1 : $1.86000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	97A (Tc)	10V	9mOhm @ 58A, 10V	4V @ 150µA	120 nC @ 10 V	±20V	4820 pF @ 50 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1405PBF MOSFET N-CH 55V 169A TO220AB Infineon Technologies	12,976 In Stock	1 : $2.34000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	169A (Tc)	10V	5.3mOhm @ 101A, 10V	4V @ 250µA	260 nC @ 10 V	±20V	5480 pF @ 25 V	-	330W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF100B201 MOSFET N-CH 100V 192A TO220AB Infineon Technologies	2,197 In Stock	1 : $4.52000 Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	192A (Tc)	10V	4.2mOhm @ 115A, 10V	4V @ 250µA	255 nC @ 10 V	±20V	9500 pF @ 50 V	-	441W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.