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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

STN3NF06L MOSFET N-CH 60V 4A SOT223 STMicroelectronics	73,721 In Stock	1 : $1.61000 Cut Tape (CT) 4,000 : $0.41732 Tape & Reel (TR)	STripFET™ II	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	4A (Tc)	5V, 10V	100mOhm @ 1.5A, 10V	2.8V @ 250µA	9 nC @ 5 V	±16V	340 pF @ 25 V	-	3.3W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
FDT86102LZ MOSFET N-CH 100V 6.6A SOT223-4 onsemi	2,098 In Stock	1 : $2.86000 Cut Tape (CT) 4,000 : $0.88775 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	6.6A (Ta)	4.5V, 10V	28mOhm @ 6.6A, 10V	3V @ 250µA	25 nC @ 10 V	±20V	1490 pF @ 50 V	-	2.2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
TK17A80W,S4X MOSFET N-CH 800V 17A TO220SIS Toshiba Semiconductor and Storage	93 In Stock	1 : $4.67000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Ta)	10V	290mOhm @ 8.5A, 10V	4V @ 850µA	32 nC @ 10 V	±20V	2050 pF @ 300 V	-	45W (Tc)	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.