Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXFX100N65X2 MOSFET N-CH 650V 100A PLUS247-3 Littelfuse Inc.	497 In Stock 990 Factory	1 : $19.56000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	100A (Tc)	10V	30mOhm @ 50A, 10V	5.5V @ 4mA	180 nC @ 10 V	±30V	11300 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFK100N65X2 MOSFET N-CH 650V 100A TO264 Littelfuse Inc.	237 In Stock 525 Factory	1 : $17.52000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	100A (Tc)	10V	30mOhm @ 50A, 10V	5.5V @ 4mA	180 nC @ 10 V	±30V	11300 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264	TO-264-3, TO-264AA
IXTK102N65X2 MOSFET N-CH 650V 102A TO264 Littelfuse Inc.	352 In Stock	1 : $18.13000 Tube	Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	102A (Tc)	10V	30mOhm @ 51A, 10V	5V @ 250µA	152 nC @ 10 V	±30V	10900 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
APT106N60LC6 MOSFET N-CH 600V 106A TO264 Microchip Technology	38 In Stock	1 : $20.95000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	106A (Tc)	10V	35mOhm @ 53A, 10V	3.5V @ 3.4mA	308 nC @ 10 V	±20V	8390 pF @ 25 V	-	833W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (L)	TO-264-3, TO-264AA
IXFX120N65X2 MOSFET N-CH 650V 120A PLUS247-3 Littelfuse Inc.	0 In Stock Check Lead Time	1 : $25.43000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	120A (Tc)	10V	24mOhm @ 60A, 10V	5.5V @ 8mA	225 nC @ 10 V	±30V	15500 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.