Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IPW60R018CFD7XKSA1 MOSFET N CH Infineon Technologies	327 In Stock	1 : $16.36000 Tube	-	CoolMOS™ CFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	101A (Tc)	10V	18mOhm @ 58.2A, 10V	4.5V @ 2.91mA	251 nC @ 10 V	±20V	9901 pF @ 400 V	-	416W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
C3M0015065D SICFET N-CH 650V 120A TO247-3 Wolfspeed, Inc.	458 In Stock	1 : $49.48000 Tube	Tariff may apply if shipping to the United States	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	120A (Tc)	15V	21mOhm @ 55.8A, 15V	3.6V @ 15.5mA	188 nC @ 15 V	+15V, -4V	5011 pF @ 400 V	-	416W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IXFB150N65X2 MOSFET N-CH 650V 150A PLUS264 Littelfuse Inc.	238 In Stock	1 : $32.18000 Tube	-	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	150A (Tc)	10V	17mOhm @ 75A, 10V	5.5V @ 8mA	430 nC @ 10 V	±30V	20400 pF @ 25 V	-	1560W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS264™	TO-264-3, TO-264AA
NTH4L015N065SC1 SILICON CARBIDE MOSFET, NCHANNEL onsemi	1,824 In Stock 3,600 Factory	1 : $20.28000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	142A (Tc)	15V, 18V	18mOhm @ 75A, 18V	4.3V @ 25mA	283 nC @ 18 V	+22V, -8V	4790 pF @ 325 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
IXFK120N65X2 MOSFET N-CH 650V 120A TO264 Littelfuse Inc.	233 In Stock	1 : $25.43000 Tube	-	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	120A (Tc)	10V	24mOhm @ 60A, 10V	5.5V @ 8mA	225 nC @ 10 V	±30V	15500 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264AA	TO-264-3, TO-264AA
IXFB110N60P3 MOSFET N-CH 600V 110A PLUS264 Littelfuse Inc.	118 In Stock	1 : $24.13000 Tube	-	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	110A (Tc)	10V	56mOhm @ 55A, 10V	5V @ 8mA	245 nC @ 10 V	±30V	18000 pF @ 25 V	-	1890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS264™	TO-264-3, TO-264AA
APT106N60LC6 MOSFET N-CH 600V 106A TO264 Microchip Technology	38 In Stock	1 : $20.95000 Tube	-	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	106A (Tc)	10V	35mOhm @ 53A, 10V	3.5V @ 3.4mA	308 nC @ 10 V	±20V	8390 pF @ 25 V	-	833W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264 (L)	TO-264-3, TO-264AA
TK100L60W,VQ MOSFET N-CH 600V 100A TO3P Toshiba Semiconductor and Storage	87 In Stock	1 : $27.08000 Tube	-	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	100A (Tc)	10V	18mOhm @ 50A, 10V	3.7V @ 5mA	360 nC @ 10 V	±30V	15000 pF @ 30 V	-	797W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(L)	TO-3PL
IXTX102N65X2 MOSFET N-CH 650V 102A PLUS247-3 Littelfuse Inc.	0 In Stock 420 Factory Check Lead Time	1 : $20.23000 Tube	-	Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	102A (Tc)	10V	30mOhm @ 51A, 10V	5V @ 250µA	152 nC @ 10 V	±30V	10900 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFB100N50P MOSFET N-CH 500V 100A PLUS264 Littelfuse Inc.	0 In Stock	1 : $30.88000 Tube	-	HiPerFET™, Polar	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	500 V	100A (Tc)	10V	49mOhm @ 50A, 10V	5V @ 8mA	240 nC @ 10 V	±30V	20000 pF @ 25 V	-	1890W (Tc)	-	-	-	Through Hole	PLUS264™	TO-264-3, TO-264AA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.