Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)3A (Ta)4.2A (Ta)5.8A (Ta)8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V3V, 10V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
19.2mOhm @ 7A, 10V28mOhm @ 5.8A, 10V52mOhm @ 4.2A, 4.5V120mOhm @ 2.8A, 4.5V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
900mV @ 250µA1.2V @ 250µA2V @ 250µA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V9.2 nC @ 10 V10.2 nC @ 4.5 V69 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V386 pF @ 15 V476 pF @ 10 V808 pF @ 15 V2580 pF @ 15 V
Power Dissipation (Max)
370mW (Ta)720mW (Ta)1.4W (Ta)1.5W (Ta)2W (Ta), 4.2W (Tc)
Supplier Device Package
6-TSOPSOT-23-3
Package / Case
SOT-23-6 Thin, TSOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
408,179
In Stock
1 : $0.19000
Cut Tape (CT)
3,000 : $0.03288
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMG2301L-7
MOSFET P-CH 20V 3A SOT23
Diodes Incorporated
110,562
In Stock
1 : $0.32000
Cut Tape (CT)
3,000 : $0.05328
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3A (Ta)
2.5V, 4.5V
120mOhm @ 2.8A, 4.5V
1.2V @ 250µA
5.5 nC @ 4.5 V
±8V
476 pF @ 10 V
-
1.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMG2305UX-13
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
360,294
In Stock
2,340,000
Factory
1 : $0.38000
Cut Tape (CT)
10,000 : $0.04931
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMG2305UX-7
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
164,074
In Stock
2,544,000
Factory
1 : $0.38000
Cut Tape (CT)
3,000 : $0.06411
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN3404L-7
MOSFET N-CH 30V 5.8A SOT23-3
Diodes Incorporated
7,107
In Stock
3,999,000
Factory
1 : $0.39000
Cut Tape (CT)
3,000 : $0.07073
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.8A (Ta)
3V, 10V
28mOhm @ 5.8A, 10V
2V @ 250µA
9.2 nC @ 10 V
±20V
386 pF @ 15 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Pkg 5540
SI3421DV-T1-GE3
MOSFET P-CH 30V 8A 6TSOP
Vishay Siliconix
19,442
In Stock
1 : $0.50000
Cut Tape (CT)
3,000 : $0.16700
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
8A (Tc)
4.5V, 10V
19.2mOhm @ 7A, 10V
3V @ 250µA
69 nC @ 10 V
±20V
2580 pF @ 15 V
-
2W (Ta), 4.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6 Thin, TSOT-23-6
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.