Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
EPC2204 TRANS GAN 100V DIE 5.6MOHM EPC	90,316 In Stock	1 : $3.23000 Cut Tape (CT) 2,500 : $1.01250 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	29A (Ta)	5V	6mOhm @ 16A, 5V	2.5V @ 4mA	7.4 nC @ 5 V	+6V, -4V	851 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2045 GANFET N-CH 100V 16A DIE EPC	45,144 In Stock	1 : $4.84000 Cut Tape (CT) 2,500 : $2.03000 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	16A (Ta)	5V	7mOhm @ 16A, 5V	2.5V @ 5mA	6.5 nC @ 5 V	+6V, -4V	685 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2019 GANFET N-CH 200V 8.5A DIE EPC	30,467 In Stock	1 : $4.96000 Cut Tape (CT) 1,000 : $1.81250 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	200 V	8.5A (Ta)	5V	42mOhm @ 7A, 5V	2.5V @ 1.5mA	2.9 nC @ 5 V	+6V, -4V	288 pF @ 100 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2001C GANFET N-CH 100V 36A DIE OUTLINE EPC	34,293 In Stock	1 : $5.98000 Cut Tape (CT) 2,500 : $2.32500 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	36A (Ta)	5V	7mOhm @ 25A, 5V	2.5V @ 5mA	9 nC @ 5 V	+6V, -4V	900 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2218 GANFET N-CH 100V DIE EPC	15,796 In Stock	1 : $7.46000 Cut Tape (CT) 1,000 : $3.12500 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	60A (Ta)	5V	3.2mOhm @ 25A, 5V	2.5V @ 7mA	13.6 nC @ 5 V	+6V, -4V	1570 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2302 TRANS GAN 100V DIE .0018OHM EPC	96,027 In Stock	1 : $8.02000 Cut Tape (CT) 3,000 : $3.67001 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	101A (Ta)	5V	1.8mOhm @ 50A, 5V	2.5V @ 14mA	23 nC @ 5 V	+6V, -4V	3200 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	7-QFN (3x5)	7-PowerWQFN
EPC2305 TRANS GAN 150V .0022OHM 3X5 7QFN EPC	26,491 In Stock	1 : $8.24000 Cut Tape (CT) 3,000 : $3.56250 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	150 V	102A (Tj)	5V	3mOhm @ 30A, 5V	2.5V @ 11mA	28.6 nC @ 5 V	+6V, -4V	4165 pF @ 75 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	7-QFN (3x5)	7-PowerWQFN
EPC2024 GANFET NCH 40V 60A DIE EPC	4,084 In Stock	1 : $9.39000 Cut Tape (CT) 500 : $4.23750 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	90A (Ta)	5V	1.5mOhm @ 37A, 5V	2.5V @ 19mA	-	+6V, -4V	2100 pF @ 20 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
EPC2053 GANFET N-CH 100V 48A DIE EPC	17,205 In Stock	1 : $7.35000 Cut Tape (CT) 2,500 : $3.06250 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	48A (Ta)	5V	3.8mOhm @ 25A, 5V	2.5V @ 9mA	14.8 nC @ 5 V	+6V, -4V	1895 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	-	-	Surface Mount	Die	Die
CCSPG1060N TR PBFREE 100V, 60A, N-CHANNEL CHIP SCALE Central Semiconductor Corp	1,429 In Stock	1 : $5.65000 Cut Tape (CT) 1,500 : $2.53750 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	60A (Tc)	5V	5.5mOhm @ 25A, 5V	2.5V @ 9mA	9.2 nC @ 5 V	+6V, -4V	1000 pF @ 50 V	-	300W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	8-CSP (3.5x2.13)	8-XFLGA, CSP

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.