Single FETs, MOSFETs

Results: 2
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®U-MOSVII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
12 V30 V
Current - Continuous Drain (Id) @ 25°C
5.9A (Tc)14A (Ta)
Rds On (Max) @ Id, Vgs
9.1mOhm @ 4A, 8V45mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
1V @ 1mA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 15 V3350 pF @ 6 V
Supplier Device Package
6-UDFNB (2x2)SOT-23-3 (TO-236)
Package / Case
6-WDFN Exposed PadTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2343CDS-T1-GE3
MOSFET P-CH 30V 5.9A SOT23-3
Vishay Siliconix
17,962
In Stock
1 : $0.60000
Cut Tape (CT)
3,000 : $0.20112
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
5.9A (Tc)
4.5V, 10V
45mOhm @ 4.2A, 10V
2.5V @ 250µA
21 nC @ 10 V
±20V
590 pF @ 15 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
807
In Stock
1 : $0.47000
Cut Tape (CT)
3,000 : $0.12576
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
14A (Ta)
-
9.1mOhm @ 4A, 8V
1V @ 1mA
47 nC @ 4.5 V
-
3350 pF @ 6 V
-
-
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.