Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SCT3030KLGC11 SICFET N-CH 1200V 72A TO247N Rohm Semiconductor	754 In Stock	1 : $81.08000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	72A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	131 nC @ 18 V	+22V, -4V	2222 pF @ 800 V	-	339W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT10N120 SICFET N-CH 1200V 12A HIP247 STMicroelectronics	0 In Stock Check Lead Time	1 : $11.79000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	12A (Tc)	20V	690mOhm @ 6A, 20V	3.5V @ 250µA	22 nC @ 20 V	+25V, -10V	290 pF @ 400 V	-	150W (Tc)	-55°C ~ 200°C (TJ)	Through Hole	HiP247™	TO-247-3
G3R30MT12K SIC MOSFET N-CH 90A TO247-4 GeneSiC Semiconductor	1,786 In Stock	1 : $22.53000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	400W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
NTHL040N120SC1 SICFET N-CH 1200V 60A TO247-3 onsemi	960 In Stock	1 : $24.50000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	20V	56mOhm @ 35A, 20V	4.3V @ 10mA	106 nC @ 20 V	+25V, -15V	1781 pF @ 800 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R45MT17K SIC MOSFET N-CH 61A TO247-4 GeneSiC Semiconductor	1,003 In Stock	1 : $33.07000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R20MT12K SIC MOSFET N-CH 128A TO247-4 GeneSiC Semiconductor	456 In Stock	1 : $36.09000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	128A (Tc)	15V	24mOhm @ 60A, 15V	2.69V @ 15mA	219 nC @ 15 V	±15V	5873 pF @ 800 V	-	542W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
SCT3040KLHRC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	891 In Stock	1 : $56.34000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Ta)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3030KLHRC11 SICFET N-CH 1200V 72A TO247N Rohm Semiconductor	714 In Stock	1 : $77.09000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	72A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	131 nC @ 18 V	+22V, -4V	2222 pF @ 800 V	-	339W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
NTHL160N120SC1 SICFET N-CH 1200V 17A TO247-3 onsemi	292 In Stock	1 : $9.69000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	20V	224mOhm @ 12A, 20V	4.3V @ 2.5mA	34 nC @ 20 V	+25V, -15V	665 pF @ 800 V	-	119W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
SCT20N120 SICFET N-CH 1200V 20A HIP247 STMicroelectronics	154 In Stock	1 : $17.08000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	20A (Tc)	20V	290mOhm @ 10A, 20V	3.5V @ 1mA	45 nC @ 20 V	+25V, -10V	650 pF @ 400 V	-	175W (Tc)	-55°C ~ 200°C (TJ)	Through Hole	HiP247™	TO-247-3
SCT3105KRC14 SICFET N-CH 1200V 24A TO247-4L Rohm Semiconductor	106 In Stock	1 : $21.76000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	137mOhm @ 7.6A, 18V	5.6V @ 3.81mA	51 nC @ 18 V	+22V, -4V	574 pF @ 800 V	-	134W	175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
TW070J120B,S1Q SICFET N-CH 1200V 36A TO3P Toshiba Semiconductor and Storage	154 In Stock	1 : $32.42000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	20V	90mOhm @ 18A, 20V	5.8V @ 20mA	67 nC @ 20 V	±25V, -10V	1680 pF @ 800 V	Standard	272W (Tc)	-55°C ~ 175°C	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
NVHL040N120SC1 SICFET N-CH 1200V 60A TO247-3 onsemi	762 In Stock	1 : $32.67000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	20V	56mOhm @ 35A, 20V	4.3V @ 10mA	106 nC @ 20 V	+25V, -15V	1781 pF @ 800 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
C3M0021120D SICFET N-CH 1200V 100A TO247-3 Wolfspeed, Inc.	2,742 In Stock	1 : $36.93000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	100A (Tc)	15V	28.8mOhm @ 50A, 15V	3.6V @ 17.7mA	160 nC @ 15 V	+15V, -4V	4818 pF @ 1000 V	-	469W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
C2M0040120D SICFET N-CH 1200V 60A TO247-3 Wolfspeed, Inc.	324 In Stock	1 : $45.81000 Tube	Z-FET™	Tube	Not For New Designs	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	20V	52mOhm @ 40A, 20V	2.8V @ 10mA	115 nC @ 20 V	+25V, -10V	1893 pF @ 1000 V	-	330W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
C2M0025120D SICFET N-CH 1200V 90A TO247-3 Wolfspeed, Inc.	7,231 In Stock	1 : $81.14000 Tube	Z-FET™	Tube	Not For New Designs	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	20V	34mOhm @ 50A, 20V	2.4V @ 10mA	161 nC @ 20 V	+25V, -10V	2788 pF @ 1000 V	-	463W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R20MT17N SIC MOSFET N-CH 100A SOT227 GeneSiC Semiconductor	109 In Stock	1 : $135.46000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	100A (Tc)	15V	26mOhm @ 75A, 15V	2.7V @ 15mA	400 nC @ 15 V	±15V	10187 pF @ 1000 V	-	523W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
E3M0075120D 1200V AUTOMOTIVE SIC 75MOHM FET Wolfspeed, Inc.	594 In Stock	1 : $18.73000 Tube	E-Series, Automotive	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	32A (Tc)	15V	97.5mOhm @ 17.9A, 15V	3.6V @ 5mA	57 nC @ 15 V	+19V, -8V	1480 pF @ 1000 V	-	145W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
C3M0032120D SICFET N-CH 1200V 63A TO247-3 Wolfspeed, Inc.	326 In Stock	1 : $32.58000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	114 nC @ 15 V	+15V, -4V	3357 pF @ 1000 V	-	283W (Tc)	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NTH4L060N090SC1 SILICON CARBIDE MOSFET, NCHANNEL onsemi	443 In Stock	1 : $15.25000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	900 V	46A (Tc)	15V, 18V	43mOhm @ 20A, 18V	4.3V @ 5mA	87 nC @ 15 V	+22V, -8V	1770 pF @ 450 V	-	221W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
SCTWA60N120G2-4 SILICON CARBIDE POWER MOSFET 120 STMicroelectronics	594 In Stock	1 : $32.93000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	18V	52mOhm @ 30A, 18V	5V @ 1mA	94 nC @ 18 V	+22V, -10V	1969 pF @ 800 V	-	388W (Tc)	-55°C ~ 200°C (TJ)	Through Hole	TO-247-4	TO-247-4
SCT20N120AG SICFET N-CH 1200V 20A HIP247 STMicroelectronics	497 In Stock	1 : $20.28000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	20A (Tc)	20V	239mOhm @ 10A, 20V	3.5V @ 1mA	45 nC @ 20 V	+25V, -10V	650 pF @ 400 V	-	153W (Tc)	-55°C ~ 200°C (TJ)	Through Hole	HiP247™	TO-247-3
SCTWA30N120 IC POWER MOSFET 1200V HIP247 STMicroelectronics	417 In Stock	1 : $29.89000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	45A (Tc)	20V	100mOhm @ 20A, 20V	3.5V @ 1mA (Typ)	105 nC @ 20 V	+25V, -10V	1700 pF @ 400 V	-	270W (Tc)	-55°C ~ 200°C (TJ)	Through Hole	HiP247™ Long Leads	TO-247-3
NTH4L022N120M3S SIC MOS TO247-4L 22MOHM 1200V onsemi	9 In Stock	1 : $36.15000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	18V	30mOhm @ 40A, 18V	4.4V @ 20mA	151 nC @ 18 V	+22V, -10V	3175 pF @ 800 V	-	352W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
MSC025SMA120B SICFET N-CH 1.2KV 103A TO247-3 Microchip Technology	0 In Stock Check Lead Time	1 : $40.13000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	103A (Tc)	20V	31mOhm @ 40A, 20V	2.8V @ 1mA	232 nC @ 20 V	+25V, -10V	3020 pF @ 1000 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Single FETs, MOSFETs

Single FETs, MOSFETs

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