Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BSH103,215 MOSFET N-CH 30V 850MA TO236AB Nexperia USA Inc.	53,477 In Stock	1 : $0.32000 Cut Tape (CT) 3,000 : $0.08568 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	850mA (Ta)	2.5V	400mOhm @ 500mA, 4.5V	400mV @ 1mA (Min)	2.1 nC @ 4.5 V	±8V	83 pF @ 24 V	-	540mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
CSD19536KCS MOSFET N-CH 100V 150A TO220-3 Texas Instruments	2,637 In Stock	1 : $5.05000 Tube	Tariff may apply if shipping to the United States	NexFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	150A (Ta)	6V, 10V	2.7mOhm @ 100A, 10V	3.2V @ 250µA	153 nC @ 10 V	±20V	12000 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
SIR826LDP-T1-RE3 MOSFET N-CH 80V 21.3A/86A PPAK Vishay Siliconix	6,083 In Stock	1 : $1.74000 Cut Tape (CT) 3,000 : $0.61136 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	21.3A (Ta), 86A (Tc)	10V	5mOhm @ 15A, 10V	2.4V @ 250µA	91 nC @ 10 V	±20V	3840 pF @ 40 V	-	5W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRF840APBF MOSFET N-CH 500V 8A TO220AB Vishay Siliconix	2,605 In Stock	1 : $2.14000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	8A (Tc)	10V	850mOhm @ 4.8A, 10V	4V @ 250µA	38 nC @ 10 V	±30V	1018 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
STP310N10F7 MOSFET N CH 100V 180A TO-220 STMicroelectronics	698 In Stock	1 : $4.77000 Tube	Tariff may apply if shipping to the United States	DeepGATE™, STripFET™ VII	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	180A (Tc)	10V	2.7mOhm @ 60A, 10V	3.8V @ 250µA	180 nC @ 10 V	±20V	12800 pF @ 25 V	-	315W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
BSS84 MOSFET, P-CH, SINGLE, -0.13A, -5 Good-Ark Semiconductor	13,742 In Stock	1 : $0.17000 Cut Tape (CT) 3,000 : $0.02874 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	50 V	130mA (Ta)	5V, 10V	10Ohm @ 100mA, 5V	2V @ 250µA	-	±20V	30 pF @ 5 V	-	225mW	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.