Single FETs, MOSFETs

Results: 5
Manufacturer
STMicroelectronicsTransphorm
Series
-SuperGaN®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)13A (Tc)15A (Tc)17A (Tc)34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V8V10V
Rds On (Max) @ Id, Vgs
60mOhm @ 22A, 10V120mOhm @ 5A, 6V180mOhm @ 11A, 8V180mOhm @ 8.5A, 10V312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id
2.6V @ 12mA2.6V @ 500µA4.8V @ 500µA4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 6 V8 nC @ 10 V9.3 nC @ 4.5 V9.6 nC @ 8 V24 nC @ 10 V
Vgs (Max)
+6V, -10V±18V±20V
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 400 V598 pF @ 400 V760 pF @ 400 V760 pF @ 480 V1000 pF @ 400 V
Power Dissipation (Max)
21W (Tc)52W (Tc)96W (Tc)119W (Tc)192W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
3-PQFN (8x8)PowerFlat™ (5x6) HVTO-220ABTO-263
Package / Case
3-PowerDFN3-PowerTDFN8-PowerVDFNTO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PQFN_8x8
TP65H300G4LSG-TR
GANFET N-CH 650V 6.5A 3PQFN
Transphorm
6,449
In Stock
1 : $3.59000
Cut Tape (CT)
3,000 : $1.74589
Tube
-
Cut Tape (CT)
Digi-Reel®
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
6.5A (Tc)
8V
312mOhm @ 5A, 8V
2.6V @ 500µA
9.6 nC @ 8 V
±18V
760 pF @ 400 V
-
21W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
3-PQFN (8x8)
3-PowerDFN
TO220
TPH3206PS
GANFET N-CH 600V 17A TO220AB
Transphorm
314
In Stock
1 : $9.52000
Tube
-
Tube
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
600 V
17A (Tc)
10V
180mOhm @ 11A, 8V
2.6V @ 500µA
9.3 nC @ 4.5 V
±18V
760 pF @ 480 V
-
96W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TP65H050G4BS
TP65H050G4BS
650 V 34 A GAN FET
Transphorm
193
In Stock
1 : $12.54000
Tube
Tube
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
34A (Tc)
10V
60mOhm @ 22A, 10V
4.8V @ 700µA
24 nC @ 10 V
±20V
1000 pF @ 400 V
-
119W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TP65H150G4LSG-TR
TP65H150G4LSG-TR
650 V 13 A GAN FET
Transphorm
5,887
In Stock
1 : $4.82000
Cut Tape (CT)
3,000 : $2.34522
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
13A (Tc)
10V
180mOhm @ 8.5A, 10V
4.8V @ 500µA
8 nC @ 10 V
±20V
598 pF @ 400 V
-
52W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
3-PQFN (8x8)
3-PowerTDFN
SGT120R65AL
SGT120R65AL
650 V, 75 MOHM TYP., 15 A, E-MOD
STMicroelectronics
0
In Stock
Check Lead Time
1 : $4.95000
Cut Tape (CT)
3,000 : $2.41037
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
650 V
15A (Tc)
6V
120mOhm @ 5A, 6V
2.6V @ 12mA
3 nC @ 6 V
+6V, -10V
125 pF @ 400 V
-
192W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerFlat™ (5x6) HV
8-PowerVDFN
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.