Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF2804PBF MOSFET N-CH 40V 75A TO220AB Infineon Technologies	3,568 In Stock	1 : $3.11000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	10V	2.3mOhm @ 75A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	6450 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1404PBF MOSFET N-CH 40V 202A TO220AB Infineon Technologies	2,646 In Stock	1 : $1.95000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	40 V	202A (Tc)	10V	4mOhm @ 121A, 10V	4V @ 250µA	196 nC @ 10 V	±20V	5669 pF @ 25 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN4R5-40PS,127 MOSFET N-CH 40V 100A TO220AB Nexperia USA Inc.	8,986 In Stock	1 : $2.03000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	4.6mOhm @ 25A, 10V	4V @ 1mA	42.3 nC @ 10 V	±20V	2683 pF @ 12 V	-	148W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRL1404ZPBF MOSFET N-CH 40V 75A TO220AB Infineon Technologies	1,323 In Stock	1 : $2.44000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	75A (Tc)	4.5V, 10V	3.1mOhm @ 75A, 10V	2.7V @ 250µA	110 nC @ 5 V	±16V	5080 pF @ 25 V	-	230W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN1R9-40PLQ MOSFET N-CH 40V 150A TO220AB Nexperia USA Inc.	500 In Stock	1 : $3.58000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	150A (Tc)	4.5V, 10V	1.7mOhm @ 25A, 10V	2.1V @ 1mA	120 nC @ 5 V	±20V	13200 pF @ 25 V	-	349W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLB3034PBF MOSFET N-CH 40V 195A TO220AB Infineon Technologies	455 In Stock	1 : $3.66000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	4.5V, 10V	1.7mOhm @ 195A, 10V	2.5V @ 250µA	162 nC @ 4.5 V	±20V	10315 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB3004PBF MOSFET N-CH 40V 195A TO220AB Infineon Technologies	516 In Stock	1 : $4.51000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	195A (Tc)	10V	1.75mOhm @ 195A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	9200 pF @ 25 V	-	380W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN8R0-40PS,127 MOSFET N-CH 40V 77A TO220AB Nexperia USA Inc.	4,878 In Stock	1 : $1.66000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	77A (Tc)	10V	7.6mOhm @ 25A, 10V	4V @ 1mA	21 nC @ 10 V	±20V	1262 pF @ 12 V	-	86W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SUP40010EL-GE3 MOSFET N-CH 40V 120A TO220AB Vishay Siliconix	117 In Stock	1 : $2.85000 Tube	ThunderFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	4.5V, 10V	1.8mOhm @ 30A, 10V	2.5V @ 250µA	230 nC @ 10 V	±20V	11155 pF @ 30 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPP015N04NGXKSA1 MOSFET N-CH 40V 120A TO220-3 Infineon Technologies	454 In Stock	1 : $4.78000 Tube	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	10V	1.5mOhm @ 100A, 10V	4V @ 200µA	250 nC @ 10 V	±20V	20000 pF @ 20 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
STP62NS04Z MOSFET N-CH 33V 62A TO220AB STMicroelectronics	933 In Stock	1 : $2.18000 Tube	MESH OVERLAY™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	33 V	62A (Tc)	10V	15mOhm @ 30A, 10V	4V @ 250µA	47 nC @ 10 V	Clamped	1330 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IXTP300N04T2 MOSFET N-CH 40V 300A TO220AB IXYS	0 In Stock Check Lead Time	1 : $6.08000 Tube	TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	300A (Tc)	10V	2.5mOhm @ 500mA, 10V	4V @ 250µA	145 nC @ 10 V	±20V	10700 pF @ 25 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.