Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesRohm Semiconductor
Series
-CoolSiC™
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C
55A (Tc)55A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V18V18V, 20V
Rds On (Max) @ Id, Vgs
50mOhm @ 20A, 20V52mOhm @ 20A, 18V54.4mOhm @ 19.3A, 18V
Vgs(th) (Max) @ Id
5.1V @ 6.4mA5.2V @ 8.3mA5.6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 20 V51 nC @ 18 V107 nC @ 18 V
Vgs (Max)
+20V, -5V+22V, -4V+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1264 pF @ 800 V1337 pF @ 800 V1620 pF @ 800 V
Power Dissipation (Max)
227W (Tc)262W268W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
PG-TO247-4-14PG-TO247-4-8TO-247-4L
Stocking Options
Environmental Options
Media
Marketplace Product
4Results

Showing
of 4
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
162
In Stock
1 : $13.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
15V, 18V
54.4mOhm @ 19.3A, 18V
5.2V @ 8.3mA
51 nC @ 18 V
+20V, -5V
1620 pF @ 800 V
-
227W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
SCT4026DRC15
SCT3040KRC15
1200V, 55A, 4-PIN THD, TRENCH-ST
Rohm Semiconductor
376
In Stock
1 : $20.29000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tj)
18V
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
262W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
SCT4026DRHRC15
SCT3040KRHRC15
1200V, 55A, 4-PIN THD, TRENCH-ST
Rohm Semiconductor
405
In Stock
1 : $20.77000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
55A (Tc)
18V
52mOhm @ 20A, 18V
5.6V @ 10mA
107 nC @ 18 V
+22V, -4V
1337 pF @ 800 V
-
262W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
12
In Stock
1 : $19.65000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
55A (Tc)
18V, 20V
50mOhm @ 20A, 20V
5.1V @ 6.4mA
43 nC @ 20 V
+23V, -5V
1264 pF @ 800 V
-
268W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-4-14
TO-247-4
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.