Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IMBF170R1K0M1XTMA1 SICFET N-CH 1700V 5.2A TO263-7 Infineon Technologies	377 In Stock	1 : $4.91000 Cut Tape (CT) 1,000 : $1.78450 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.2A (Tc)	12V, 15V	1000mOhm @ 1A, 15V	5.7V @ 1.1mA	5 nC @ 12 V	+20V, -10V	275 pF @ 1000 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R078M2HXTMA1 SICFET N-CH 1200V 29A TO263 Infineon Technologies	804 In Stock	1 : $7.28000 Cut Tape (CT) 1,000 : $3.02512 Tape & Reel (TR)	-	CoolSiC™ G2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	29A (Tc)	15V, 18V	78.1mOhm @ 8.9A, 18V	5.1V @ 2.8mA	20.6 nC @ 18 V	+23V, -10V	700 pF @ 800 V	-	158W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R350M1HXTMA1 SICFET N-CH 1200V 8.1A TO263 Infineon Technologies	1,588 In Stock	1 : $5.25000 Cut Tape (CT) 1,000 : $1.95619 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	4.7A (Tc)	-	468mOhm @ 2A, 18V	5.7V @ 1mA	5.9 nC @ 18 V	+18V, -15V	196 pF @ 800 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R220M1HXTMA1 SICFET N-CH 1200V 13A TO263 Infineon Technologies	984 In Stock	1 : $5.96000 Cut Tape (CT) 1,000 : $2.31862 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	13A (Tc)	-	294mOhm @ 4A, 18V	5.7V @ 1.6mA	9.4 nC @ 18 V	+18V, -15V	312 pF @ 800 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.