Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
EPC7014UBC GAN FET HEMT 60V 1A COTS 4UB EPC Space, LLC	274 In Stock	1 : $181.89000 Bulk	e-GaN®	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	60 V	1A (Tc)	5V	580mOhm @ 1A, 5V	2.5V @ 140µA	-	+7V, -4V	22 pF @ 30 V	-	-	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD	4-SMD, No Lead
EPC7003AC GAN FET HEMT 100V 5A COTS 4UB EPC Space, LLC	138 In Stock	1 : $276.11000 Bulk	-	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	10A (Tc)	10V	42mOhm @ 10A, 5V	2.5V @ 1.4mA	1.5 nC @ 5 V	+6V, -4V	168 pF @ 50 V	-	-	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD	4-SMD, No Lead
EPC7019GC GAN FET HEMT 40V 95A COTS 5UB EPC Space, LLC	25 In Stock	1 : $279.77000 Bulk	eGaN®	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	40 V	80A (Tc)	5V	4mOhm @ 50A, 5V	2.5V @ 18mA	-	+6V, -4V	2830 pF @ 20 V	-	-	-55°C ~ 150°C (TJ)	Surface Mount	5-SMD	5-SMD, No Lead
EPC7014UBSH GAN FET HEMT 60V 1A 4UB EPC Space, LLC	11 In Stock	1 : $222.91000 Bulk	e-GaN®	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	60 V	1A (Tc)	5V	580mOhm @ 1A, 5V	2.5V @ 140µA	-	-	22 pF @ 30 V	-	-	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD	4-SMD, No Lead

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.