Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IMBG120R008M2HXTMA1 SIC DISCRETE Infineon Technologies	765 In Stock	1 : $33.75000 Cut Tape (CT) 1,000 : $21.89312 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	189A (Tc)	15V, 18V	7.7mOhm @ 89.9A, 18V	5.1V @ 28.3mA	195 nC @ 18 V	+23V, -10V	6380 pF @ 800 V	-	800W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UF3SC120009K4S SICFET N-CH 1200V 120A TO247-4 onsemi	789 In Stock	1 : $59.40000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	120A (Tc)	12V	11mOhm @ 100A, 12V	6V @ 10mA	234 nC @ 15 V	±20V	8512 pF @ 100 V	-	789W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
NTH4L014N120M3P SIC MOSFET 1200 V 14 MOHM M3P SE onsemi	360 In Stock	1 : $29.40000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	127A (Tc)	15V, 18V	20mOhm @ 74A, 18V	4.63V @ 37mA	329 nC @ 18 V	+22V, -10V	6230 pF @ 800 V	-	686W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
IMZC120R012M2HXKSA1 IMZC120R012M2HXKSA1 Infineon Technologies	155 In Stock	1 : $24.49000 Tube	CoolSiC™	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	129A (Tc)	15V, 18V	12mOhm @ 57A, 18V	5.1V @ 17.8mA	124 nC @ 18 V	+23V, -7V	4050 pF @ 800 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17	TO-247-4
E4M0013120K 13M, 1200V, SIC FET TO-247, AUTO Wolfspeed, Inc.	0 In Stock Check Lead Time	1 : $96.00000 Tube	E	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	153A (Tc)	15V	17mOhm @ 84.29A, 15V	3.8V @ 23.18mA	293 nC @ 15 V	+19V, -8V	7407 pF @ 1000 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L	TO-247-4
SCT015W120G3-4AG TO247-4 STMicroelectronics	0 In Stock Check Lead Time	600 : $28.75000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	129A (Tc)	15V, 18V	17.5mOhm @ 60A, 18V	4.2V @ 10mA	167 nC @ 18 V	+22V, -10V	3512 pF @ 800 V	-	673W (Tc)	-55°C ~ 200°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4	TO-247-4

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.