Single FETs, MOSFETs

Results: 5
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®TrenchFET® Gen IVU-MOSIIIU-MOSVIIU-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)4A (Ta)14A (Ta)25A (Ta), 90.6A (Tc)35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4V4.5V, 10V7.5V, 10V
Rds On (Max) @ Id, Vgs
4mOhm @ 15A, 10V9.1mOhm @ 4A, 8V11.7mOhm @ 15A, 10V55mOhm @ 4A, 4.5V3.6Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1V @ 1mA1.5V @ 100µA2.3V @ 250µA3.6V @ 250µA-
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V47 nC @ 4.5 V135 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
13.5 pF @ 3 V190 pF @ 30 V1870 pF @ 30 V3350 pF @ 6 V4370 pF @ 20 V
Power Dissipation (Max)
150mW (Ta)1W (Ta)3.7W (Ta), 52W (Tc)5W (Ta), 65.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-UDFNB (2x2)PowerPAK® 1212-8PowerPAK® 1212-8SSOT-23FVESM
Package / Case
6-WDFN Exposed PadPowerPAK® 1212-8PowerPAK® 1212-8SSOT-23-3 Flat LeadsSOT-723
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
22,394
In Stock
1 : $0.43000
Cut Tape (CT)
3,000 : $0.07817
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V4A (Ta)1.8V, 4.5V55mOhm @ 4A, 4.5V--±12V190 pF @ 30 V-1W (Ta)150°C (TJ)Surface MountSOT-23FSOT-23-3 Flat Leads
PowerPAK 1212-8
SIS443DN-T1-GE3
MOSFET P-CH 40V 35A PPAK 1212-8
Vishay Siliconix
63,853
In Stock
1 : $1.53000
Cut Tape (CT)
3,000 : $0.63418
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)40 V35A (Tc)4.5V, 10V11.7mOhm @ 15A, 10V2.3V @ 250µA135 nC @ 10 V±20V4370 pF @ 20 V-3.7W (Ta), 52W (Tc)-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8PowerPAK® 1212-8
13,908
In Stock
1 : $0.28000
Cut Tape (CT)
8,000 : $0.04348
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V100mA (Ta)2.5V, 4V3.6Ohm @ 10mA, 4V1.5V @ 100µA-±20V13.5 pF @ 3 V-150mW (Ta)150°C (TJ)Surface MountVESMSOT-723
56,541
In Stock
1 : $0.48000
Cut Tape (CT)
3,000 : $0.12961
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)12 V14A (Ta)-9.1mOhm @ 4A, 8V1V @ 1mA47 nC @ 4.5 V-3350 pF @ 6 V---55°C ~ 150°C (TJ)Surface Mount6-UDFNB (2x2)6-WDFN Exposed Pad
PowerPAK 1212-8S
SISS22DN-T1-GE3
MOSFET N-CH 60V 25A/90.6A PPAK
Vishay Siliconix
5,997
In Stock
1 : $1.49000
Cut Tape (CT)
3,000 : $0.67165
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V25A (Ta), 90.6A (Tc)7.5V, 10V4mOhm @ 15A, 10V3.6V @ 250µA44 nC @ 10 V±20V1870 pF @ 30 V-5W (Ta), 65.7W (Tc)-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8SPowerPAK® 1212-8S
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.