Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI4403DDY-T1-GE3 MOSFET P-CH 20V 15.4A 8SOIC Vishay Siliconix	6,096 In Stock	1 : $0.55000 Cut Tape (CT) 2,500 : $0.15945 Tape & Reel (TR)	TrenchFET® Gen III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	15.4A (Tc)	1.8V, 4.5V	14mOhm @ 9A, 4.5V	1V @ 250µA	99 nC @ 8 V	±8V	3250 pF @ 10 V	-	5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI4101DY-T1-GE3 MOSFET P-CH 30V 25.7A 8SO Vishay Siliconix	6,909 In Stock	1 : $1.02000 Cut Tape (CT) 2,500 : $0.31222 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	25.7A (Tc)	4.5V, 10V	6mOhm @ 15A, 10V	2.5V @ 250µA	203 nC @ 10 V	±20V	8190 pF @ 15 V	-	6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRF7425TRPBF MOSFET P-CH 20V 15A 8SO Infineon Technologies	5,045 In Stock	1 : $1.52000 Cut Tape (CT) 4,000 : $0.48750 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	15A (Ta)	2.5V, 4.5V	8.2mOhm @ 15A, 4.5V	1.2V @ 250µA	130 nC @ 4.5 V	±12V	7980 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.