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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220FP
STP4NK60ZFP
MOSFET N-CH 600V 4A TO220FP
STMicroelectronics
6,955
In Stock
1 : $1.90000
Tube
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ActiveN-ChannelMOSFET (Metal Oxide)600 V4A (Tc)10V2Ohm @ 2A, 10V4.5V @ 50µA26 nC @ 10 V±30V510 pF @ 25 V-25W (Tc)150°C (TJ)Through HoleTO-220FPTO-220-3 Full Pack
GT50JR22(STA1,E,S)
TK20J60W,S1VE
X35 PB-F POWER MOSFET TRANSISTOR
Toshiba Semiconductor and Storage
24
In Stock
1 : $5.36000
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-
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ActiveN-ChannelMOSFET (Metal Oxide)600 V20A (Ta)10V155mOhm @ 10A, 10V3.7V @ 1mA48 nC @ 10 V±30V1680 pF @ 300 V-165W (Tc)150°CThrough HoleTO-3P(N)TO-3P-3, SC-65-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.