Single FETs, MOSFETs

Results: 2
Series
CoolMOS™ C3OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
200 V800 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)54.9A (Tc)
Rds On (Max) @ Id, Vgs
22mOhm @ 52A, 10V85mOhm @ 32.6A, 10V
Vgs(th) (Max) @ Id
3.9V @ 3.3mA4V @ 137µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V288 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3680 pF @ 100 V7520 pF @ 100 V
Power Dissipation (Max)
214W (Tc)500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3PG-TSON-8-3
Package / Case
8-PowerTDFNTO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TSON-8-3
BSC220N20NSFDATMA1
MOSFET N-CH 200V 52A TSON-8
Infineon Technologies
10,839
In Stock
1 : $4.63000
Cut Tape (CT)
5,000 : $2.16450
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
52A (Tc)
10V
22mOhm @ 52A, 10V
4V @ 137µA
43 nC @ 10 V
±20V
3680 pF @ 100 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-3
8-PowerTDFN
AUIRFP4310Z BACK
SPW55N80C3FKSA1
MOSFET N-CH 800V 54.9A TO247-3
Infineon Technologies
517
In Stock
1 : $13.96000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
54.9A (Tc)
10V
85mOhm @ 32.6A, 10V
3.9V @ 3.3mA
288 nC @ 10 V
±20V
7520 pF @ 100 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.