Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BSS123 MOSFET N-CH 100V 170MA SOT23-3 onsemi	152,575 In Stock	1 : $0.37000 Cut Tape (CT) 3,000 : $0.06630 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170mA	4.5V, 10V	5Ohm @ 200mA, 10V	2V @ 250µA	1.8 nC @ 10 V	±20V	14 pF @ 25 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FDN340P MOSFET P-CH 20V 2A SUPERSOT3 onsemi	26,512 In Stock	1 : $0.41000 Cut Tape (CT) 3,000 : $0.12390 Tape & Reel (TR)	-	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	2A (Ta)	2.5V, 4.5V	70mOhm @ 2A, 4.5V	1.5V @ 250µA	10 nC @ 4.5 V	±8V	779 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
RTR025N05HZGTL MOSFET N-CH 45V 2.5A TSMT3 Rohm Semiconductor	8,620 In Stock	1 : $0.73000 Cut Tape (CT) 3,000 : $0.20604 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	45 V	2.5A (Ta)	2.5V, 4.5V	130mOhm @ 2.5A, 4.5V	1.5V @ 1mA	3.2 nC @ 4.5 V	±12V	250 pF @ 10 V	-	700mW (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TSMT3	SC-96

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.