Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IAUC60N04S6L039ATMA1 IAUC60N04S6L039ATMA1 Infineon Technologies	14,404 In Stock	1 : $1.14000 Cut Tape (CT) 5,000 : $0.30350 Tape & Reel (TR)	-	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	4.02mOhm @ 30A, 10V	2V @ 14µA	20 nC @ 10 V	±16V	1179 pF @ 25 V	-	42W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TDSON-8	8-PowerTDFN
BSS123 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	43,310 In Stock	1 : $0.13000 Cut Tape (CT) 3,000 : $0.02525 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200mA (Ta)	4.5V, 10V	5Ohm @ 200mA, 10V	2.5V @ 250µA	1.8 nC @ 10 V	±20V	14 pF @ 50 V	-	350mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
BSS138 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	106,214 In Stock	1 : $0.15000 Cut Tape (CT) 3,000 : $0.02913 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	1.6V @ 250µA	-	±20V	27 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.